In situ electrochemical characterization of porous n ‐InP (100)

Abstract

Porous structures have been anodically grown onto n-InP (100) in HCl. Surface chemistry and pore morphology have been respectively studied by X-ray photoelectron spectroscopy and scanning electron microscopy but in situ electrochemical investigations have been emphasized. Capacitance and photocurrent experiments have been performed while the porous etching occurred. No modifications of the electronic structure (flat band potential remains constant) are observed during the pore formation. However, for high dissolution charges, the photocurrent spectra are sharpened because the porous films behave like electrically "dead layers".

In-Situ FFT Impedance Spectroscopy during the Growth of n-type InP "Crysto Pores"

“…0 . [5] The pore depth d pore can thus be calculated from the simple relations , qnv and [7] taking into account the slanted pore growth with respect to the surface by the angle . This result is in perfect agreement with the experimentally determined growth law described in Fig.…”

Mesoporosity in doped silicon nanowires from metal assisted chemical etching monitored by phonon scattering

“…Electrochemical etching can fine tune the direction and size of pore growth [14], which defines the remaining skeletal material of a range of semiconductors such as Si, but also III-Vs such as InP [15][16][17][18][19][20][21][22][23] and GaAs. MACE, however, can result in high sidewall roughness, and the control of this surface roughness and the development of internal mesporosity [24][25][26] are key challenges for reproducible large scale formation of functional nanoscale Si.…”

Electrochemical and Photo-Electrochemical Properties of Porous n-InP Layers

“…Thus no shift of the flat band potential occurs. This was confirmed by photocurrent vs. potential experiments performed between subsequent galvanostatic steps (14). For U > 0.6 V, the porous film acts as a "giant" depletion layer.…”