Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport Approach

Penzin, O.; Smith, Lee; Erlebach, A.; Choi, Munkang; Lee, Ko-Hsin

doi:10.1109/ted.2017.2751968

Cited by 24 publications

(14 citation statements)

References 17 publications

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“…This equation is region‐specific, so we applied the 1D Schr ö dinger two times in the channel region for better accuracy [24]. Also, we have used kinetic velocity model (KVM) to account the ballistic mobility in the channel [25]. KVM is a new model to account the quasi‐ballistic transport in DD domain.…”

Section: Methodsmentioning

confidence: 99%

“…It is based on non‐Matheiessen rule and combines the kinetic mobility (

μ_{k}

) and DD mobility (

μ_{d}

) to calculate the total mobility (

μ

) as

\frac{μ}{μ_{d}} + \frac{μ^{2}}{μ_{normalk}^{2}} = 1

μ = \frac{μ_{k}^{2}}{2 \times μ_{d}} \sqrt{1 + \frac{4 \times μ_{d}^{2}}{μ_{k}^{2}}} - 1

\frac{1}{μ_{k}} = \frac{α_{t}}{μ_{normalk}^{T}} + \frac{α_{b}}{μ_{k}^{b}}

where

α_{t}

and

α_{b}

are fitting parameters.

μ_{k}^{T}

is the kinetic mobility limited by the thermionic emission and

μ_{k}^{b}

is the kinetic mobility limited by the free carrier acceleration [25]. The total gate capacitance (

C_{t}

) is

false[1 / C_{t} = 1 / C_{ox} + 1 / C_{Q} false]

.…”

Section: Methodsmentioning

confidence: 99%

“…where α t and α b are fitting parameters. μ k T is the kinetic mobility limited by the thermionic emission and μ k b is the kinetic mobility limited by the free carrier acceleration [25]. The total gate capacitance…”

Section: Simulation Of Bp-dgmosfet Using Tcadmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application

Rathinam

Pon

Carmel

et al. 2020

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

Section: Methodsmentioning

confidence: 99%

“…It is based on non‐Matheiessen rule and combines the kinetic mobility (

μ_{k}

) and DD mobility (

μ_{d}

) to calculate the total mobility (

μ

) as

\frac{μ}{μ_{d}} + \frac{μ^{2}}{μ_{normalk}^{2}} = 1

μ = \frac{μ_{k}^{2}}{2 \times μ_{d}} \sqrt{1 + \frac{4 \times μ_{d}^{2}}{μ_{k}^{2}}} - 1

\frac{1}{μ_{k}} = \frac{α_{t}}{μ_{normalk}^{T}} + \frac{α_{b}}{μ_{k}^{b}}

where

α_{t}

and

α_{b}

are fitting parameters.

μ_{k}^{T}

is the kinetic mobility limited by the thermionic emission and

μ_{k}^{b}

is the kinetic mobility limited by the free carrier acceleration [25]. The total gate capacitance (

C_{t}

) is

false[1 / C_{t} = 1 / C_{ox} + 1 / C_{Q} false]

.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application

Rathinam

Pon

Carmel

et al. 2020

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

“…Drift-Diffusion [18] model which takes into account the contribution of electron affinity, the band gap as well as the spatial variations of the electrostatic potential, is used to describe the current densities for electrons and holes. Since pure drift-diffusion model is not accurate enough beyond nanometers [19], and ballistic transport effects must be considered, we also incorporated ballistic mobility models [20], [21]. Because the oxide thickness and channel width have reached quantum-mechanical length scales, the wave nature of electrons and holes can no longer be neglected, thus Density-Gradient [22] is used to simulate quantization effects.…”

Section: B Simulation Physical Models and Calibrationmentioning

confidence: 99%

A Simulation Study of Gate-All-Around Nanowire Transistor With a Core-Substrate

2020

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In this letter, a novel Core-Substrate Gate-All-Around (CSGAA) nanowire structure has been proposed, investigated and simulated systematically based on 3D numerical simulation. This new structure is characterized by a Core-Substrate directly connected to the substrate wafer or well which is formed by a bulk region inside the tubular channel. Comparisons are carried out between conventional Gate-All-Around (GAA) nanowire transistor and newly proposed CSGAA structure. This budding structure exhibits a maximum of four orders of magnitude of reduction in off-state current, high saturation current and low performance degradation. With the help of Core-Substrate, the CSGAA structure is able to maintain excellent performance despite geometric and structural variation. Its special structure is very suitable for the use of vertical Gate-All-Around nanowire structure, making it a promising candidate of future high performance and low power CMOS devices. INDEX TERMS CMOS, core-substrate gate-all-around, CSGAA, field effect transistor, GAA, nanowire.

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“…Therefore, a modified Matthiessen's rule is needed with weighting factors for ballistic and DD transport terms. An alternative formulation, based on the kinetic velocity model (KVM) [12], has been presented to account for the ballistic effects in the DD approach. In this model, the ballistic mobility, including both thermionic emission and free carrier acceleration terms, is expressed using mesh-point based DD variables and does not require an explicit dependence on the channel length.…”

Section: Introductionmentioning

confidence: 99%

Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model

Lee¹,

Erlebach

Penzin

et al. 2021

IEEE J. Electron Devices Soc.

Self Cite

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This paper presents the calibration of the novel kinetic velocity model (KVM) in the drift-diffusion (DD) transport approach, which can account for the ballistic effect in shortchannel devices. The KVM considers a thermionic emission limit and a free carrier acceleration limit for the mobility. We develop a methodology to extract the parameters for the KVM and for the high-field saturation velocity model for SiGe nanowires over the whole mole fraction range. The calibrated DD simulations with KVM show good agreement with Boltzmann transport equation results in terms of on-state current and carrier-weighted velocity distribution over a wide range of gate lengths for both linear and saturation regimes.

show abstract

Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport Approach

Cited by 24 publications

References 17 publications

Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application

Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application

A Simulation Study of Gate-All-Around Nanowire Transistor With a Core-Substrate

Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model

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