2007
DOI: 10.1016/j.tsf.2007.03.167
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ITO thin films deposited by advanced pulsed laser deposition

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Cited by 50 publications
(21 citation statements)
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“…ITO is a direct gap semiconductor with n type con ductivity caused by oxygen vacancies and Sn 4+ ions that exhibit donor properties [2]. ITO films are syn thesized by various methods: vapor phase deposition [3,4], magnetron sputtering [5][6][7], the sol-gel method [8], layer by layer atomic deposition [9], and other methods.…”
Section: Introductionmentioning
confidence: 99%
“…ITO is a direct gap semiconductor with n type con ductivity caused by oxygen vacancies and Sn 4+ ions that exhibit donor properties [2]. ITO films are syn thesized by various methods: vapor phase deposition [3,4], magnetron sputtering [5][6][7], the sol-gel method [8], layer by layer atomic deposition [9], and other methods.…”
Section: Introductionmentioning
confidence: 99%
“…So far, many methods have been used to deposit ITO thin films, such as pulsed laser deposition (PLD) [4,5], sputtering [6], e-beam evaporation (EBE) [7], sol-gel technique [8], and spray pyrolysis [9,10]. Among all these methods, e-beam evaporation has the advantages of low cost, low temperature, high purity and high deposition rate [1,7].…”
Section: Introductionmentioning
confidence: 99%
“…Various deposition methods, such as reactive magnetron sputtering [4], pulsed laser deposition [5], electron beam evaporation [6], and ion beam deposition [7] have been used to deposit transparent conducting oxides (TCO), such as those in ITO films. Among these deposition technologies, reactive magnetron sputtering has received a great deal of attention for the preparation of TCO films due to several apparent advantages such as a high deposition rate on large area substrates and easily controllable film composition.…”
Section: Introductionmentioning
confidence: 99%