Pulsed laser deposition of ITO thin films and their characteristics

Zuev, Dmitry; Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Храмова, О. Д.; Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A.; Rumyanzeva, M. N.; Гаськов, А.М.

doi:10.1134/s1063782612030256

Cited by 26 publications

(12 citation statements)

References 28 publications

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“…The shallow traps operate mostly at low temperatures, and the deeper traps are added at increasing temperature. These results are largely similar to those obtained in other studies. − …”

Section: Nanoparticle Parameterssupporting

confidence: 92%

Absorption of Infrared Radiation by an Electronic Subsystem of Semiconductor Nanoparticles

et al. 2016

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The frequency dependence of the cross section of photon absorption by semiconductor nanoparticles in the infrared range is considered. Light is absorbed by conduction electrons with plasmon formation and electrons in the traps both within the bulk and on the nanoparticle surface. The regularities of the photoabsorption cross section largely depend on the size of the nanoparticles. For sufficiently large nanoparticles, there appear only two characteristic peaks in the cross section distribution corresponding to light absorption by two types of electronsconduction electrons and electrons in the volume traps of nanoparticles. The number of electrons trapped on the surface is relatively small, and the electrons do not contribute to the total cross section of photoabsorption. In the case of photon absorption by quantum dots, the contribution of these surface electrons as well as a third peak is evident. This result occurs due to a complex dependence of the number of electrons in the traps on their depth and size of nanoparticles.

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“…The shallow traps operate mostly at low temperatures, and the deeper traps are added at increasing temperature. These results are largely similar to those obtained in other studies. − …”

Section: Nanoparticle Parameterssupporting

confidence: 92%

Absorption of Infrared Radiation by an Electronic Subsystem of Semiconductor Nanoparticles

et al. 2016

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“…6 To improve the J sc of SHJ solar cells while maintaining high fill factor, it is necessary to explore and develop TCO films with better optical and electrical properties. In the past decades, the ITO films have been grown by several deposition techniques, including direct current (DC) or radiofrequency sputtering, 7,8 thermal evaporation and electron beam evaporation, 9,10 plasma-enhanced reactive thermal evaporation, 11,12 pulsed laser deposition, 13,14 and reactive plasma deposition. 15 Among them, the sputtering process is currently the most widely used technique to deposit ITO films in mass production.…”

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confidence: 99%

Power conversion efficiency of 25.26% for silicon heterojunction solar cell with transition metal element doped indium oxide transparent conductive film as front electrode

Dong¹,

Sang

Peng³

et al. 2022

Progress in Photovoltaics

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In this paper, to improve the power conversion efficiency (Eff) of silicon heterojunction (SHJ) solar cells, we developed the indium oxide doped with transition metal elements (IMO) as front transparent conductive oxide (TCO) layer combined with microcrystalline silicon (μ‐Si:H(n+)) for SHJ solar cell. The optical and electrical properties as well as structures of hydrogenated IMO (IMO:H) films were studied and compared to conventional indium tin oxide (ITO) film. Such IMO:H films have high carrier mobility over 70 cm2/V·s, high transmittance, and low free carrier absorption, which leads to a high short circuit current density exceeding 40 mA/cm2. In addition, the low sheet resistance and contact resistivity of the IMO:H films contribute to the high fill factor of the solar cell. The average Eff of solar cells with IMO:H + μ‐Si:H(n+) is improved by 0.4% compared with that of the solar cells with ITO + a‐Si:H(n+). Finally, a certified efficiency up to 25.26% (total area, 274.5 cm2) was achieved.

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“…Let us consider a semiconductor with a high concentration of conduction electrons, such as In 2 O 3 , where donors are the oxygen vacancies introduced to the material upon its synthesis and processing. Although the electron binding energy ε d of a single oxygen vacancy donor is unknown, the estimate of ε d can be obtained by using the experimental temperature dependence of the conductivity of a bulk sample of In 2 O 3 measured in refs and . This is because the conductivity of the semiconductor is approximately proportional to the concentration of conduction electrons n c ∼ exp{−ε d /2 kT }. , The estimates based on the conductivity of bulk In 2 O 3 give ε d ≈ 0.2 eV, which is approximately the same as the value obtained using conductivity measurements for the nanostructured In 2 O 3 film sample in vacuum, i.e.…”

Section: Equilibrium Distribution Of the Charges Inside Spherical Nan...mentioning

confidence: 61%

Inhomogeneous Charge Distribution in Semiconductor Nanoparticles

et al. 2015

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The inhomogeneous spatial distribution of charge carriers within semiconductor oxide nanoparticles is investigated by taking into account processes involving the interaction of conduction electrons with oxygen donor vacancies in the bulk and with oxygen adsorbates at the surface. The main characteristics of the semiconductor nanoparticles, such as the surface charge, the distributions of positive and negative charges in the bulk, and the temperature dependence of the concentration of conduction electrons, are determined selfconsistently by taking into account the interaction of all charges in the system under conditions of complete thermodynamic equilibrium. The developed statistical mechanics model allows us to determine the net surface negative charge on oxygen atoms, the spatial distributions of the conduction electrons, the positively charged ionized donors, and the electrical potential inside the nanoparticle as a function of nanoparticle radius and temperature.

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Pulsed laser deposition of ITO thin films and their characteristics

Cited by 26 publications

References 28 publications

Absorption of Infrared Radiation by an Electronic Subsystem of Semiconductor Nanoparticles

Absorption of Infrared Radiation by an Electronic Subsystem of Semiconductor Nanoparticles

Power conversion efficiency of 25.26% for silicon heterojunction solar cell with transition metal element doped indium oxide transparent conductive film as front electrode

Inhomogeneous Charge Distribution in Semiconductor Nanoparticles

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