Emerging brain-inspired computing needs phase-change materials of the next generation with lower energy consumption and wider temperature range. Gallium tellurides appear to be promising candidates enable to achieve the necessary requirements.

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The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser dep osition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 × 10 -4 Ω cm has been achieved in the ITO films with content of Sn 5 at %.

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Two series of Mg x Zn 1−x O/ZnO multiple quantum wells with 18 and 27 at.% of magnesium content in the barrier layers and well widths L w from 1 to 20 nm have been grown by the pulsed laser deposition method. Stimulated emission is observed in the photoluminescence (PL) spectra excited by the pulsed laser (λ exc = 248 nm). The pump density threshold of stimulated emission depends nonmonotonically on the well width, which is associated with an increase of the internal quantum efficiency of the two-dimensional structures caused by a reduction of the radiative lifetime of excitons with decreasing well width, as has been shown by the time-resolved photoluminescence spectra analysis. A minimum value of the radiative lifetime τ r = 355 ps was obtained for the Mg 0.27 Zn 0.73 O/ZnO MQW with a well width L w = 2.6 nm. It has been established that the deep energy levels produced by active surface states with carrier recombination forming the green band in the PL spectrum (λ GB = 510 nm) are metastable.

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