Fabrication of black multicrystalline silicon surface by nanosecond laser ablation

Rapid laser scanning based surface texturing for energy applications and laser-assisted doping

“…The resulting surface morphology reduces reflection and improves the light absorption by increased roughness in microscale. 11,12 In order to evaluate the texturing performance, spectral reflectance was measured from the laser textured areas and compared as shown in Figure 3. The overall reflection is significantly reduced after rapid laser scanning based surface texturing.…”

“…8 Microgrooves are created by a scanning laser beam, enhancing light trapping despite an expected decrease in overall performance of the solar cell due to loosened microstructures after surface texturing 8 . Black silicon can also be created by a femtosecond laser 9,10 or a nanosecond laser under a controlled environment 11 , applying a large number of pulses to induce spiked structures. This process typically requires either an etchant or a vacuum environment, neither of which is ideal for manufacturing settings.…”

“…Usually, the resulting textured surface suffers from defects and loose structures; a subsequent chemical etching step is necessary. 11 This study relies on rapid scanning of nanosecond laser pulses to achieve superior process uniformity for an arbitrary processing area. The beam spot size is sufficiently small, initiating small scale thermal capillary effect, allowing for the surface topography to be controlled.…”

Modification of silicon surface by direct laser interference

“…Another elegant method, SPL, uses the tip of a scanning probe microscope (SPM) to create patterns. The SPM tip can be used to produce marks by scratching, nanoindentation or by heating with the tip and the resolution can be as high as around 10nm [9][10][11][12][13][14]. Compared with the above mentioned technologies, the significant advantage of Direct Laser Interference Lithography (DLIL) is a promising tool for volume production of micro and nano structures.…”

Lézerrel kezelt szilícium felületek, valamint impulzuslézeres rétegépítéssel előállított amorf szilícium és SixC vékonyrétegek ellipszometriai vizsgálata

“…Ennek legfontosabb előnye, hogy tiszta és érintésmentes módszer [8,9]. Az alkalmazott impulzushosszak a nanoszekundumos vagy a szubpikoszekundumos tartományba esnek [6,10]. A kísérletekhez Nd:YAG [11,12], nanoszekundumos excimer [13,14,15], szubpikoszekundumos excimer [16], és femtoszekundumos lézereket [8,17,18] használtak.…”