The frequency dependence of the cross
section of photon absorption
by semiconductor nanoparticles in the infrared range is considered.
Light is absorbed by conduction electrons with plasmon formation and
electrons in the traps both within the bulk and on the nanoparticle
surface. The regularities of the photoabsorption cross section largely
depend on the size of the nanoparticles. For sufficiently large nanoparticles,
there appear only two characteristic peaks in the cross section distribution
corresponding to light absorption by two types of electronsconduction
electrons and electrons in the volume traps of nanoparticles. The
number of electrons trapped on the surface is relatively small, and
the electrons do not contribute to the total cross section of photoabsorption.
In the case of photon absorption by quantum dots, the contribution
of these surface electrons as well as a third peak is evident. This
result occurs due to a complex dependence of the number of electrons
in the traps on their depth and size of nanoparticles.
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