Investigation of heterostructure between diamond and iridium on sapphire

Annealing effect of surface-activated bonded diamond/Si interface

“…Recent years, the growth of SCD by microwave plasma chemical vapor deposition (CVD) on a foreign substrate has attracted considerable attention [9][10][11][12][13]. Several attempts to grow large SCD on SiC or Ir substrates by CVD have been conducted [14][15][16][17][18]. However, diamond thin films grown on these substrates contained many grain boundaries and appeared like poly-crystal diamond.…”

Chemical vapor deposition of diamond on an adamantane-coated sapphire substrate

“…[8][9][10] Also, there are a few studies of the growth of diamond on sapphire coated with a buffer layer of platinum and iridium. [11][12][13] However, the growth of diamond lms on optically transparent substrates like sapphire has to address several issues. For diamond growth on polished and smooth sapphire wafers, diamond nucleation is one of the most critical issues.…”

Effect of substrate bias on the growth behavior of iridium on A-plane sapphire using radio frequency sputtering at low temperatures

“…The FWHM of the single-crystal substrate is measured to 0.15°, the FWHM of the iridium layer in two perpendicular directions are 0.80° and 0.96°. These values are about 3 to 4 times larger than the best values reported in literature [33,34] (measured on iridium films with deposition temperatures above 600°C).…”