Annealing effect of surface-activated bonded diamond/Si interface

Liang, Jianbo; Zhou, Yan; Masuya, Satoshi; Gucmann, Filip; Singh, Manikant; Pomeroy, James W.; Kim, Seongwoo; Kuball, Martin; Kasu, Makoto; Shigekawa, Naoteru

doi:10.1016/j.diamond.2019.02.015

Cited by 32 publications

(18 citation statements)

References 34 publications

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“…The bonding interface with high thermal stability was contributed to the atomic intermixing layer formed at the bonding interface that 13 played a role of relaxing thermal stress caused by the difference in thermal expansion coefficients between diamond and Si. Similar results have been found at Si/diamond interface fabricated by SAB [16] The heat of the GaAs TLM pattern is mainly generated in the active region and spreads out down to the substrate. The thermal resistance of the GaAs TLM pattern is the sum of the thermal resistance of the GaAs layer and the diamond or sapphire substrate, which could be calculated using the following equations [26]:…”

Section: Discussionsupporting

confidence: 84%

“…The direct bonding of Si and diamond using SAB method has been reported [14]. More importantly, the SAB-fabricated Si/diamond interface demonstrated extremely high thermal stability (up to 1000 °C) and high applicability [15,16]. However, the only flaw is that there was a thick amorphous carbon layer formed at the bonding interface due to the Ar fast atom beam (FAB) irradiation in the surface activation process, which will largely degrade the interfacial physical property and mechanical strength.…”

Section: Introductionmentioning

confidence: 97%

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Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Liang

Nakamura

Zhan

et al. 2021

Diamond and Related Materials

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Section: Discussionsupporting

confidence: 84%

Section: Introductionmentioning

confidence: 97%

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Liang

Nakamura

Zhan

et al. 2021

Diamond and Related Materials

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“…The amorphous layer should play a role in relieving stress caused by the difference in thermal expansion coefficient between diamond and InGaP. A similar result has been reported for the diamond/Si interface fabricated by SAB [21]. After annealing at 400 °C, the increased amorphous layer thickness is more helpful in the relaxation of the stress.…”

Section: Resultssupporting

confidence: 73%

Room temperature direct bonding of diamond and InGaP in atmospheric air

et al. 2021

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a new technique of diamond and inGaP room temperature bonding in atmospheric air is reported. Diamond substrate cleaned with h 2 sO 4 /h 2 O 2 mixture solution is bonded to inGaP exposed after removing the Gaas layer by the h 2 sO 4 /h 2 O 2 /h 2 O mixture solution. the bonding interface is free from interfacial voids and mechanical cracks. an atomic intermixing layer with a thickness of about 8 nm is formed at the bonding interface, which is composed of c, in, Ga, P, and O atoms. after annealing at 400 °c, no exfoliation occurred along the bonding interface. an increase of about 2 nm in the thickness of the atomic intermixing layer is observed, which plays a role in alleviating the thermal stress caused by the difference of the thermal expansion coefficient between diamond and inGaP. the bonding interface demonstrates high thermal stability to device fabrication processes. this bonding method has a large potential for bonding large diameter diamond and semiconductor materials.

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“…A similar result was reported for a Si/diamond interface fabricated by SAB. [ 31 ] At 500 °C, the compressive stress in the as‐bonded and 700 °C‐annealed GaN/diamond heterointerfaces increased to 0.81 and 0.74 GPa, which was larger than that (0.41 GPa) of the GaN grown on Si. This difference was mainly due to the thermal lattice expansion coefficient mismatch between diamond and GaN, which was larger than that between Si and GaN.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

et al. 2021

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The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐power devices. However, it is a big challenge to grow GaN on diamond due to the large lattice and thermal‐expansion coefficient mismatch between GaN and diamond. In this work, the fabrication of a GaN/diamond heterointerface is successfully achieved by a surface activated bonding (SAB) method at room temperature. A small compressive stress exists in the GaN/diamond heterointerface, which is significantly smaller than that of the GaN‐on‐diamond structure with a transition layer formed by crystal growth. A 5.3 nm‐thick intermediate layer composed of amorphous carbon and diamond is formed at the as‐bonded heterointerface. Ga and N atoms are distributed in the intermediate layer by diffusion during the bonding process. Both the thickness and the sp2‐bonded carbon ratio of the intermediate layer decrease as the annealing temperature increases, which indicates that the amorphous carbon is directly converted into diamond after annealing. The diamond of the intermediate layer acts as a seed crystal. After annealing at 1000 °C, the thickness of the intermediate layer is decreased to approximately 1.5 nm, where lattice fringes of the diamond (220) plane are observed.

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Annealing effect of surface-activated bonded diamond/Si interface

Cited by 32 publications

References 34 publications

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Room temperature direct bonding of diamond and InGaP in atmospheric air

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

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