Investigation of doping profiles and incorporation of Sn and Te in GaAs and inxGa1–xas films grown from thin solution layer

Bolkhovityanov, Yu. B.; Bolkhovityanova, R. I.; Zembatov, N. B.; Marchenko, N. E.

doi:10.1002/pssa.2210220141

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Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution

Bolkhovityanov¹,

Bolkhovityanova²

1975

Phys. Stat. Sol. (a)

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An investigation is made of doping of GaAs and InxGa1−xAs films with Sn and Te. The distribution of donors and acceptors, their sum and difference, and the compensation coefficient k = Na/Nd are demonstrated as functions of growth temperature, composition of the liquid phase and substrate orientation. It is shown that Nd, Nd — Na, Nd — Na increase for Te doped films and decrease for Sn doped films when the temperature is lowered. The same parameters increase for Sn doped and decrease for Te doped films with an increase of the indium part in the liquid phase. The inequalities K(111)B (Nd + Na)(111)A were observed for all investigated temperatures and liquid phase compositions.

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Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution

Bolkhovityanov¹,

Bolkhovityanova²

1975

Phys. Stat. Sol. (a)

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Properties of Liquid Phase Epitaxial GaAs Grown from Tin Solution

Neumann

Jacobs

Reppin

et al. 1975

Phys. Stat. Sol. (a)

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The electrical properties and the chemical Sn content of liquid phase epitaxial GaAs grown from tin solution were investigated as function of the growth temperature (500 to 1000 °C) and the substrate orientation ((001), (111) A, (111)B). A mean electron concentration of n ≈︁ 8 × 1018 cm−3 is found to be independent of growth temperature and substrate orientation. The Sn concentration NSn in the solid phase and the electrically determined net impurity concentration ND + NA are also independent of the growth temperature where always the relation holds n < NSn < ND + NA. The calculated effective tin distribution coefficient in GaAs shows the expected temperature dependence with the substrate orientation dependence keff((001)) ≈︁ keff((111)A) < keff((111)B).

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Transition regions in epitaxial films

Александров

1977

Phys. Stat. Sol. (a)

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Investigation of doping profiles and incorporation of Sn and Te in GaAs and inxGa1–xas films grown from thin solution layer

Cited by 5 publications

References 5 publications

Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution

Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution

Properties of Liquid Phase Epitaxial GaAs Grown from Tin Solution

Transition regions in epitaxial films

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