Properties of Liquid Phase Epitaxial GaAs Grown from Tin Solution

Abstract

The electrical properties and the chemical Sn content of liquid phase epitaxial GaAs grown from tin solution were investigated as function of the growth temperature (500 to 1000 °C) and the substrate orientation ((001), (111) A, (111)B). A mean electron concentration of n ≈︁ 8 × 1018 cm−3 is found to be independent of growth temperature and substrate orientation. The Sn concentration NSn in the solid phase and the electrically determined net impurity concentration ND + NA are also independent of the growth temperature where always the relation holds n < NSn < ND + NA. The calculated effective tin distribution coefficient in GaAs shows the expected temperature dependence with the substrate orientation dependence keff((001)) ≈︁ keff((111)A) < keff((111)B).