Transition regions in epitaxial films

Александров, Л. Н.

doi:10.1002/pssa.2210440102

Cited by 11 publications

(2 citation statements)

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“…The corresponding data in the literature for bulk SnSe 2 samples are within 0.9-1.03 eV. The shift of the fundamental optical absorption edge to shorter wavelengths points to the effects of size quantization of the spectrum of electron states [11][12][13].…”

Section: Resultsmentioning

confidence: 99%

Tin diselenide quantum-sized island films

et al. 2012

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Section: Resultsmentioning

confidence: 99%

Tin diselenide quantum-sized island films

et al. 2012

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“…Epitaxial technology is always related with preparation of layers with various types of conductivity or doped at various levels and differing by properties both of the substrate and each other [12]. The mismatch of lattices defining relative deformation is…”

Section: Discussionmentioning

confidence: 99%

Influence of initial defects on defect formation process in ion doped silicon

Смынтына¹,

Sviridova²

2009

Semicond. phys. quantum electron. optoelectron.

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We study the influence of initial defects in high-resistance epitaxial silicon layers of high-resistance epitaxial silicon structures on defect formation processes at ion boron doping. The method of reverse voltage-capacitance characteristics revealed two maxima of dopant concentration in epitaxial silicon layers ion-doped by boron. Studing the structure of the near-surface area in ion-doped epitaxial silicon by means of modern methods has shown that in the field of the first concentration maximum (the nearest one to a wafer surface), the fine-blocked silicon structure is localised. In the range of the second doping concentration maximum, the grid of dislocations with the variable period within one grid and consisting of 60° dislocations is found out. In the area of dislocation grids, oxygen atoms have been found out. The variable period in the grid is related with a change of mechanical stress and deformation distribution law in the plane of dopant diffusion front as dependent on the presence of initial defects in silicon.

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Space heterogeneity of luminescent centers in SiC‐epitaxial layers detected by the color CL‐SEM

et al. 1992

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The spatial distribution of luminescence centers in S i c epitaxial layers grown by the sublimation "sandwich method" have been studied by means of the real-colour SEM technique. The cellular inhomogeneity distribution of cathodoluminescence (CL) intensity in epitaxial layers is demonstrated. Different spectral composition of CL emission depending upon the growth temperature is observed near p n junctions and along the substrate boundary. The nature of the inhomogeneities in Sic epitaxial layers is discussed.

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Transition regions in epitaxial films

Cited by 11 publications

References 50 publications

Tin diselenide quantum-sized island films

Tin diselenide quantum-sized island films

Influence of initial defects on defect formation process in ion doped silicon

Space heterogeneity of luminescent centers in SiC‐epitaxial layers detected by the color CL‐SEM

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