Influence of initial defects on defect formation process in ion doped silicon

Abstract

We study the influence of initial defects in high-resistance epitaxial silicon layers of high-resistance epitaxial silicon structures on defect formation processes at ion boron doping. The method of reverse voltage-capacitance characteristics revealed two maxima of dopant concentration in epitaxial silicon layers ion-doped by boron. Studing the structure of the near-surface area in ion-doped epitaxial silicon by means of modern methods has shown that in the field of the first concentration maximum (the nearest one to a wafer surface), the fine-blocked silicon structure is localised. In the range of the second doping concentration maximum, the grid of dislocations with the variable period within one grid and consisting of 60° dislocations is found out. In the area of dislocation grids, oxygen atoms have been found out. The variable period in the grid is related with a change of mechanical stress and deformation distribution law in the plane of dopant diffusion front as dependent on the presence of initial defects in silicon.

Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing

“…7) that consist of a mixture of solid solutions of iron and chrome. Accumulation of mechanical stresses, which can exceed silicon yield stress, takes place on dendrite-silicon boundary [14,15]. Thus, the area of strongly disordered silicon is formed directly under the dendrite.…”