Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing

Abstract

The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in near-surface layers of oxidated monocrystalline silicon. It was shown that stacking faults are generated during the oxidation process, and the mechanism of their formation is connected with the defective layered structure of initial silicon wafers. It was established that defects of layered heterogeneity, on the one hand, lead to the formation of stacking faults and, on the other hand, prevent their propagation to the wafer bulk.

The micro morphology correction function of a silicon wafer CMP surface

“…As large scale integrated circuits with line width processes below 65 nm have entered mass production, 300 mm czochralski Si (CZ-Si) wafer has gradually become a mainstream substrate material, required for the works of high-end IC engineering; it has become the key to achieving low surface defects and high planarization of the wafer surface of IC engineering OE1 3 . However, thermal oxide layer faults can be generated during the silicon crystal growth process and co-exist with dislocations in the wafer OE4;5 ; such original defects in the silicon could increase the surface roughness, leading to the possible failure of the device performance. For instance, it may form a nonuniform PN junction with a negative impact on the device surface leakage current, breakdown characteristic and knot bottom noise.…”