Inversion boundaries in GaAs grown on Si

Liliental‐Weber, Z.; O’Keefe, Michael A.; Washburn, J.

doi:10.1016/0304-3991(89)90168-x

Cited by 18 publications

(3 citation statements)

References 16 publications

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“…APBs have been studied in a number of different compound semiconductor crystals, including GaAs (Neave et al ., 1983; Cho et al ., 1985; Liliental‐Weber et al ., 1989; Rasmussen et al ., 1989, 1991a,b; Ueda et al ., 1989; McKernan et al ., 1991), SiC (Rasmussen et al ., 1989; Pirouz et al ., 1987a,b; Cheng et al ., 1989) and GaP (Morizane, 1977; Soga et al ., 1993; Samavedam et al ., 1995; Cohen & Carter, 1997). Experimental observations have shown that they may facet parallel to different crystallographic planes or they may be curved.…”

Section: Introductionmentioning

confidence: 99%

Structure of the (110) antiphase boundary in gallium phosphide

Cohen

Carter

2002

Journal of Microscopy

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SummaryThe morphology of antiphase boundaries in GaP films grown by molecular beam epitaxy on Si (001) has been studied by transmission electron microscopy. The inversion of the crystal polarity between antiphase domains was confirmed by convergent-beam electron diffraction. The APBs were often found to facet parallel to {110} planes. Strong-beam α -fringe contrast observed along the (110) facets indicates that adjacent antiphase domains are related by an additional rigid-body lattice translation. Diffraction-contrast analysis shows that this R corresponds to a shear parallel to the [001] direction and a small expansion. The magnitude of the translation was inferred, quantitatively, through a comparison between energy-filtered zero-loss images of the α -fringe contrast with numerical calculations. The components of the rigid-body lattice translation were determined to be 0.023 ± 0.0033 nm in the [001] direction and 0.005 ± 0.002 nm in the !! 0 direction. Based upon a geometric model of the {110} antiphase boundary, the lengths of the Ga and P antisite bonds were calculated to be 254 ± 2 pm and 227 ± 4 pm, respectively.

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Section: Introductionmentioning

confidence: 99%

Structure of the (110) antiphase boundary in gallium phosphide

Cohen

Carter

2002

Journal of Microscopy

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“…Their appearance is most probably due to the presence of single steps at the Si surface and the preferred bonding of As with Si. The presence of single steps was observed by using many surface sensitive techniques [ 14] and it was confirmed by cross-sectional TEM using the Atomic Resolution Microscope in Berkeley with a point-to-point resolution of l. 7 A [ 15]. APDs can be detected by chemical etching of the surface [ 16] or by TEM using the convergent beam technique [ 17,18] or dark field imaging for 200 and -200 reflection [ 19].…”

Section: Polar On Non-polar Growthmentioning

confidence: 99%

Methods to Decrease Defect Density in GaAs/Si Heteroepitaxy

Liliental‐Weber

1989

MRS Proc.

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“…The presence of single steps was observed by using many surface sensitive techniques32 and it was confirmed by cross-sectional TEM. 33 Such APDs are three-dimensional islands, and the boundaries (APBs) between these islands can be formed on low index as well as on high-index planes. Our own observations show that very often such boundaries macroscopically appear to be formed on various planes, for example, on {Ill} planes, although microscopically they consist of terraces of { 110) APBs.22 Formation of APBs on {II 0} planes would confirm Petrofrs prediction that {II 0} and { 112} APBs with alternating As-As and Ga-Ga bonds have the lowest energy of formation34…”

Section: Antiphase Boundariesmentioning

confidence: 99%