Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High-Voltage SiC BJTs and Darlington Transistors

Elahipanah, Hossein; Salemi, Arash; Zetterling, Carl-Mikael; Östling, Mikael

doi:10.1109/ted.2016.2613142

Cited by 6 publications

(2 citation statements)

References 31 publications

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“…It is critical to boost the gain of RFAs for loss compensation and signal conditioning while maintaining a compact form factor and low complexity. To improve the gain of an RFA, various circuit topologies, such as a cascode configuration and Darlington structure, have been proposed in the literature [6][7][8][9][10]. The cascode topology provides increased output resistance that leads to a higher output voltage, and increased isolation between the input and output ports, which simplifies the design of the matching network and reduces the Miller effect, at the cost of a higher power supply.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Sarker

Song

2020

Electronics

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For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an fT-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 µm SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach.

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Section: Introductionmentioning

confidence: 99%

Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Sarker

Song

2020

Electronics

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“…SiC bipolar junction transistors (BJTs) are promising power devices due to their low forward-voltage drop for high temperature, high frequency and radiation hardened application. Furthermore, the related integrated circuits of SiC BJTs are also under development [1][2][3][4]. Compared with SiC MOSFETs, SiC BJTs have no critical problems of gate oxide reliability and low channel mobility.…”

Section: Introductionmentioning

confidence: 99%

Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability

Zhang

Chen

Luo

et al. 2019

Semicond. Sci. Technol.

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A silicon carbide bipolar junction transistor with novel emitter field plate (EFP-BJT) design is proposed in this paper. The fabricated EFP-BJT features a metal plate of the extending emitter electrode with a 50-nanometer-thick oxide layer overlapped on the extrinsic base surface. The contrast of experimental results show that a 56% increase of maximum current gain is obtained by the EFP-BJT compared with a conventional SiC BJT (C-BJT), with the EFP-BJT's current gain of 43 measured at the collector current density (J C ) of 716 A cm −2 corresponding to a specific on-state resistance (R SP_ON ) of 5.4 mΩ•cm 2 and open-base breakdown voltage (BV CEO ) of 1.5 kV. The novel EFP-BJTs are entirely compatible with the process and design considerations of the conventional ones. The in-depth mechanism comparisons between the proposed EFP-BJT and C-BJT are studied by the simulation tool TCAD Silvaco. The surface recombination effect of EFP-BJT is greatly reduced by the modulation of the emitter field plate. Additionally, due to the surface recombination suppression of the novel structure, EFP-BJTs have effectively enhanced reliability. Compared with C-BJTs, there is no significant degradation of the collector current for the fabricated EFP-BJTs under the forward current stress test.

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Realization of a broadband hybrid X-band power amplifier based on f-doubler technique

Feghhi

Joodaki

2019

AEU - International Journal of Electronics and Communications

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Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High-Voltage SiC BJTs and Darlington Transistors

Cited by 6 publications

References 31 publications

Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability

Realization of a broadband hybrid X-band power amplifier based on f-doubler technique

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