Realization of a broadband hybrid X-band power amplifier based on f-doubler technique

Feghhi, Rouhollah; Joodaki, Mojtaba

doi:10.1016/j.aeue.2019.03.018

Cited by 11 publications

(6 citation statements)

References 31 publications

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“…For example, with 𝑍 1 = 100 Ω, 𝑍 2 = 10 Ω, 𝑍 0 = 50 Ω, and VSWR = 1.2, the maximum bandwidth is about 40%. Generally, the low impedance line section is replaced by a radial line section, as shown in Figure 2c [6,11]. This arrangement provides better bandwidth than a 𝜆/4 open circuited line section and is smaller in size.…”

Section: Microstrip Biasing Circuitmentioning

confidence: 99%

“…One way to match one or more circuits is to insert a quarter-wave line between the impedance of the load and the input impedance line and to choose a suitable characteristic impedance. This is one of the simplest techniques to perform impedance matching in a narrow band [9,11].…”

Section: Impedance Matchingmentioning

confidence: 99%

“…The biasing network used is shown in figure 4. The proposed power amplifier is biased with two voltage sources VDS of + 2,8 V and VGS of -0,5 V. As necessary for bandwidth, the RF choke is realised by using a high impedance transmission line of length 𝜆/4 followed by a radial stub [6,11]. This combination helps prevent RF energy from entering the power supply and increases bandwidth.…”

Section: Proposed Broadband Power Amplifiermentioning

confidence: 99%

See 2 more Smart Citations

Approach for the Design of a Broadband Microwave Power Amplifier in Microstrip Technology for Mobile Communications Systems

LAHSAINI¹,

ZENKOUAR²,

SAADI³

2020

IJEEI

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This work presents a broadband power amplifier in S-band in microstrip technology. The proposed power amplifier is modeled with a single-stage architecture based on a field effect transistor ATF13786 of Agilent Technologies (hp) ® . The used transistor has been biased with transmission lines and it has been matched with networks in the form of λ/4 transformers filters at the input and at the output. This amplifier has been studied and optimized using the Advanced Design System (ADS ® ) software. The simulation results of the output power and S parameters show excellent characteristics with a satisfactory gain greater than 10.9 dB, low reflections, a saturated output power of 16.4 dBm with a 1 dB compression point at an input power level of about 5 dBm, a maximum PAE of 25.3% and unconditional stability in the desired frequency band. The modeled amplifier can be integrated into mobile communications systems namely LTE mobile networks (2500 to 2690 MHz) and wireless networks using Wi-Fi protocol (2400 to 2485 MHz).

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Section: Microstrip Biasing Circuitmentioning

confidence: 99%

Section: Impedance Matchingmentioning

confidence: 99%

Section: Proposed Broadband Power Amplifiermentioning

confidence: 99%

See 1 more Smart Citation

Approach for the Design of a Broadband Microwave Power Amplifier in Microstrip Technology for Mobile Communications Systems

LAHSAINI¹,

ZENKOUAR²,

SAADI³

2020

IJEEI

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show abstract

“…Moreover, their long lifetime and ease of maintenance make the design of high‐power amplifiers using single GaN‐HEMT bare‐dies possible and hence make them the right candidate for space applications 1‐4 . Since then, numerous SSPA designs based on GaN HEMTs are reported from lower frequency bands, 5‐13 to X ‐ and Ku ‐bands, 14‐16 and even upper bands 17 …”

Section: Introductionmentioning

confidence: 99%

“…Moreover, their long lifetime and ease of maintenance make the design of high-power amplifiers using single GaN-HEMT bare-dies possible and hence make them the right candidate for space applications. [1][2][3][4] Since then, numerous SSPA designs based on GaN HEMTs are reported from lower frequency bands, [5][6][7][8][9][10][11][12][13] to X-and Ku-bands, [14][15][16] and even upper bands. 17 Different technologies, such as monolithic microwave integrated circuits (MMICs), and hybrid integration techniques based on bare-dies have been used for the realization of high-frequency SSPAs.…”

Section: Introductionmentioning

confidence: 99%

A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology

Ahmadi

Moazzen

Baee

et al. 2020

Int J RF Microw Comput Aided Eng

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In this paper, the design, fabrication, and measurement results of a two‐stage X‐band highly efficient 50 W power amplifier are presented. In the design approach, two 0.25 μm bare‐die GaN on SiC transistors, where one of them has the largest gate periphery on the market, are chosen. A considerably high saturated power gain of more than 20 dB and better than 40% power‐added efficiency (PAE) are achieved over the 10.9 to 11.1 GHz bandwidth. Modulated measurements demonstrate an average output power of 40 W with good linearity specifications. Thermal assessment from measurement results ensures transistors' durability.

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Design of X-band SSPA based on GaN HEMT for telemetry subsystem of near-earth space missions

Aliparast

Noghani

Farhadi

et al. 2021

AEU - International Journal of Electronics and Communications

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Realization of a broadband hybrid X-band power amplifier based on f-doubler technique

Cited by 11 publications

References 31 publications

Approach for the Design of a Broadband Microwave Power Amplifier in Microstrip Technology for Mobile Communications Systems

Approach for the Design of a Broadband Microwave Power Amplifier in Microstrip Technology for Mobile Communications Systems

A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology

Design of X-band SSPA based on GaN HEMT for telemetry subsystem of near-earth space missions

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