Phase-change random access memory (PRAM) is considered as one of the most promising candidates for future memories because of its good scalability and cost-effectiveness [1]. Besides implementations with standard interfaces like NOR flash or LPDDR2-NVM, application-oriented approaches using PRAM as main-memory or storage-class memory have been researched [2][3]. These studies suggest that noticeable merits can be achieved by using PRAM in improving power consumption, system cost, etc. However, relatively low chip density and insufficient write bandwidth of PRAMs are obstacles to better system performance. In this paper, we present an 8Gb PRAM with 40MB/s write bandwidth featuring 8Mb sub-array core architecture with 20nm diode-switched PRAM cells [4]. When an external high voltage is applied, the write bandwidth can be extended as high as 133MB/s.
In the past year, fifth-generation (5G) wireless technology has seen dramatic growth, spurred on by the continuing demand for faster data communications with lower latency. At the same time, many researchers argue that 5G will be inadequate in a short time, given the explosive growth of machine connectivity, such as the Internet-of-Things (IoT). This has prompted many to question what comes after 5G. The obvious answer is sixth-generation (6G), however, the substance of 6G is still very much undefined, leaving much to the imagination in terms of real-world implementation. What is clear, however, is that the next generation will likely involve the use of terahertz frequency (0.1–10 THz) electromagnetic waves. Here, we review recent research in terahertz wireless communications and technology, focusing on three broad topic classes: the terahertz channel, terahertz devices, and space-based terahertz system considerations. In all of these, we describe the nature of the research, the specific challenges involved, and current research findings. We conclude by providing a brief perspective on the path forward.
In mobile systems, the demand for the energy saving continues to require a low power memory sub-system. During the last decade, the floating-gate flash memory has been an indispensable low power memory solution. However, NOR flash memory has begun to show difficulties in scaling due to the device's reliability and yield issues. Over the past few years, phase-change random access memory (PRAM) has emerged as an alternative non-volatile memory (NVM) owing to its promising scalability and low cost process [1,2]. In this paper, a PRAM, implemented in a 58nm PRAM process with a low power double-data-rate nonvolatile memory (LPDDR2-N) interface, is presented [3].
A Josephson junction was fabricated by inducing a selective surface modification on a YBa2Cu3O7−y strip with an atomic force microscope (AFM). The surface modification in the field of conductive AFM tip results in the controlled growth of protrusions across the entire strip. By properly regulating the extent of AFM modification, we achieved a Josephson junction. The self-radiation power of about 50 pW at a resonant frequency of 22 GHz was detected from this junction, which is in excellent agreement with the Josephson frequency-voltage relationship.
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