Interpretation of high-field current-voltage and breakdown characteristics in SOI substrates formed using SIMOX technology

Wainwright, S. P.; Hall, Stephen

doi:10.1088/0268-1242/8/10/011

Cited by 5 publications

(2 citation statements)

References 4 publications

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“…Redistribution subject to ECS terms of use (see 138.251.14. 35 Downloaded on 2015-04-12 to IP can explain the asymmetric nature of conduction as resulting from an inferior BOX/substrate interface: larger concentration of excess Si in the case of RBH which is consistent with electron spin resonance and etchback studies13 and feasibly, a greater likelihood of interfacial asperities in this defective region. To resolve this dilemma, we identify two important issues for which the theories must be able to account.…”

Section: Discussionsupporting

confidence: 70%

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On Electron Conduction and Trapping in SIMOX Dielectric

Hall

Wainwright

1996

J. Electrochem. Soc.

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We present experimental and theoretical evidence that the high field conduction mechanism for buried oxide prepared by the technique of separation by implanted oxygen (SIMOX) is due to Fowler-Nordheim (F-N) injection aided by field intensification at interfacial asperities. The asperities are believed to be the pyramidal protusions thought to be stacking faults, observed in electron microscopy (XTEM) studies. The standard F-N theory is modified to include field intensification (Ic,.,) and reduced area (kA) factors to account for the presence of these defects. Fitting of the model to experimental current-voltage data yields a value for kA which predicts an average asperity separation in agreement with XTEM and defect etching studies. This work therefore challenges an existing theory which considers that the high field conduction involves tunnelling between Si clusters arising from the excess Si known to exist in SIMOX. We present arguments based on experimental observations relating to constant voltage stressing experiments, that our model can explain the observed behavior and, in addition, the anomalies relating to the excess Si tunneling model. IntroductionSubstrates incorporating buried dielectric prepared by separation by implantation of oxygen (SIMOX) are strong

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Section: Discussionsupporting

confidence: 70%

“…ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14 35. Downloaded on 2015-04-12 to IP…”

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confidence: 99%

On Electron Conduction and Trapping in SIMOX Dielectric

Hall

Wainwright

1996

J. Electrochem. Soc.

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Negative bias instability at the SIMOX buried oxide-silicon overlayer interface

Ngwa

Hall

1995

Microelectronic Engineering

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Electron trapping studies in multiple- and single-implant SIMOX oxides

Ngwa

Hall

1994

Semicond. Sci. Technol.

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A detailed study of electron traps in SIMOX buried oxides prepared by both single-and multiple-implant and anneal technologies is reported. The techniques of avalanche electron injection and constant voltage stressing (cvs) have been used to reveal three distinct electron traps in SIMOX. The largest, with a capture cross section of the order,lO-" cm2, is thought to be related to the so-called E' centres associated with excess Si in the oxide matrix. Its concentration is seen consisieniiy io be higher in singie-impiani maieriai which is known to contain a significantly higher concentration of excess Si than multipleimplant material. SIMOX also contains a smaller trap, with a cross section typically of the order 10-l6 cm2, and it is suggested that it is a result of contamination during implantation. The third and smallest trap has a cross section of the order

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Interpretation of high-field current-voltage and breakdown characteristics in SOI substrates formed using SIMOX technology

Cited by 5 publications

References 4 publications

On Electron Conduction and Trapping in SIMOX Dielectric

On Electron Conduction and Trapping in SIMOX Dielectric

Negative bias instability at the SIMOX buried oxide-silicon overlayer interface

Electron trapping studies in multiple- and single-implant SIMOX oxides

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