Electron trapping studies in multiple- and single-implant SIMOX oxides

Abstract

A detailed study of electron traps in SIMOX buried oxides prepared by both single-and multiple-implant and anneal technologies is reported. The techniques of avalanche electron injection and constant voltage stressing (cvs) have been used to reveal three distinct electron traps in SIMOX. The largest, with a capture cross section of the order,lO-" cm2, is thought to be related to the so-called E' centres associated with excess Si in the oxide matrix. Its concentration is seen consisieniiy io be higher in singie-impiani maieriai which is known to contain a significantly higher concentration of excess Si than multipleimplant material. SIMOX also contains a smaller trap, with a cross section typically of the order 10-l6 cm2, and it is suggested that it is a result of contamination during implantation. The third and smallest trap has a cross section of the order

Radio frequency plasma annealing of positive charge generated by Fowler–Nordheim electron injection in buried oxides in silicon

“…1-3 Similar phenomena have been reported for the buried oxide ͑BOX͒ of silicon-on-insulator ͑SOI͒ structures fabricated by silicon implanted by oxygen ͑SIMOX͒. [4][5][6] While the negative charge trapping phenomenon has been studied carefully in these structures, positive charge generation in the BOX layer during avalanche and tunneling injection has only received scant attention. Since enormous positive charge generation occurs during the first minutes of injection and may contribute to failure of SOI devices in operation, it is necessary to study this phenomenon and find ways to alleviate the problem.…”

Electrical properties of multiple-layer structures formed by implantation of nitrogen or oxygen and annealed under high pressure

“…Notice that the formation of donors in implanted silicon has been observed in SIMOX structures. 17 The origin of these donors is unknown. The pressure-stimulated formation of donors was observed also after implantation with high-energy ions of inert gas 18 as well.…”