A detailed study of electron traps in SIMOX buried oxides prepared by both single-and multiple-implant and anneal technologies is reported. The techniques of avalanche electron injection and constant voltage stressing (cvs) have been used to reveal three distinct electron traps in SIMOX. The largest, with a capture cross section of the order,lO-" cm2, is thought to be related to the so-called E' centres associated with excess Si in the oxide matrix. Its concentration is seen consisieniiy io be higher in singie-impiani maieriai which is known to contain a significantly higher concentration of excess Si than multipleimplant material. SIMOX also contains a smaller trap, with a cross section typically of the order 10-l6 cm2, and it is suggested that it is a result of contamination during implantation. The third and smallest trap has a cross section of the order
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