Current-voltage characteristics of thin buried oxide SOI material are shown to exhibit Fowler-Nordheim type conduction that is affected by field intensification arising from asperities at the interfaces. The conduction is modelled to yield parameters that can be used to deduce Information concerning the quality of the interface and the likely form of the asperities. For the sol material used in the experiments it is determined that the asperities at the bodylburied oxide interface are larger and smoother than those at the substratelburied oxide interface. It is also demonstrated that under some circumstances the effect of the breakdown can be used to estimate the size of the asperities.
A range of electrical characterization techniques have been applied to thin film, thin buried oxide SIMOX sol substrates. Some capacitance-voltage results wereseen toexhibitfrequencydispersiondueto high concentrationsofsurfacestates but have been analysed to yield buried oxide thickness and doping levels. The ability todepletefrom both interfacesofthe buried oxideallowed ustodetermine boththe density and the position of the positive charge centroid present in the oxides. The current-voltage characteristics were seen to be ohmic at low voltages (<50V) but there is evidence that Fowler-Nordheim conduction is the dominant mechanism at higher voltages. Analysis of Fowler-Nordheim data yielded low barrier heights to electron emission in the range of 0.8 to 1.9 eV which were explained as the effect of field intensification at interfacial asperities. The I-V plots also indicated that high levels of electron trapping were occurring in the oxides and this was studied further using constant voltage stressing. The role in the trapping of excess Si and Si islands present in the implanted oxides is discussed at length.
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