Negative bias instability at the SIMOX buried oxide-silicon overlayer interface

Ngwa, C S; Hall, S.

doi:10.1016/0167-9317(95)00082-j

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…Consequently, the high-temperature stability of SOI structures is the necessary condition for proper device operation. From this point of view, the main weakness of SOI structures is thick buried oxide (BOX), which can effectively accumulate a positive and a negative charge during the application of sufficiently low electric fields to SOI structures [2,3]. Thus, the paper is devoted to review high-temperature instability phenomena in SOI structures and devices especially with respect to bias-temperature (BT) processes in the BOX.…”

Section: Introductionmentioning

confidence: 99%

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High-temperature instability processes in SOI structures and MOSFETs

Nazarov,

Kilchytska,

Vovk

et al. 2001

JTIT

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The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI struc- tures are presented. The studies are focused mainly on elec- trical discharging processes in the BOX at high temperature and its link with new instability phenomena such as high- temperature kink effects in SOI MOSFETs.

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Section: Introductionmentioning

confidence: 99%

“…Thus, the paper is devoted to review high-temperature instability phenomena in SOI structures and devices especially with respect to bias-temperature (BT) processes in the BOX. 2. Methods for electrical characterization of high-temperature instability processes…”

Section: Introductionmentioning

confidence: 99%