Charge Carrier Injection and Trapping in the Buried Oxides of SOI Structures

Nazarov, A. M.; Kilchytska, Valeriya; Barchuk, I.P.

doi:10.1007/978-94-010-0339-1_10

Cited by 2 publications

(4 citation statements)

References 44 publications

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“…In order to explain such effects in [13] a model, considering the appearance of interfacial asperities, has been developed. However, for the experimental UNIBOND structures this approach is physically unjustified, especially for the Si film/BOX interface, and for the SIMOX structures the use of this approach gives unreasonable large values of asperity separation [14]. We suggest that an increase of the probability of electron tunneling through the potential barrier in the case of the SOI BOX can be connected to the trap-assisted tunneling (TAT) mechanism [15].…”

Section: High-field Electron Injectionmentioning

confidence: 97%

“…In this case it is possible to suggest that anode hole injection (AHI) [28] or band-to-band impact ionization (BTBI) [29,30] mechanisms exist in the experimental UNIBOND SOI structure at high electric fields. Detailed overview of positive charge generation mechanisms in the BOX of SOI structures is presented in [14]. Since there was no analytic expression for the holegeneration probability in the case of anode hole injection mechanism in the paper by DiMaria et al [28], we numerically approximated the data presented in Fig.…”

Section: Mechanisms Of Positive Charge Generationmentioning

confidence: 99%

“…8a. The theoretical generation-efficiency curves were calculated from the following expression [14]:…”

Section: Mechanisms Of Positive Charge Generationmentioning

confidence: 99%

“…The curves describing the maximum generated charge, as well as the characteristics of the generation cross-section, were obtained using equations (28a) and (28b) of [14]. The hole-capture cross-section was σ p = 1 • 10 −14 cm −2 .…”

Section: Mechanisms Of Positive Charge Generationmentioning

confidence: 99%

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High-field current transport and charge trapping in buried oxide of SOI materials under high-field electron injection

Nazarov,

Houk,

Kilchytska

2004

JTIT

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Mechanisms of the charge transfer, the charge trapping, and the generation of positive charge during the high-field electron injection into buried oxide of silicon-on-insulator structures fabricated by different technologies are analyzed based on the data obtained from current-voltage, injection current-time, and capacitance-voltage characteristics together with SIMS data. Electron injection both from the Si film and the Si substrate is considered. The possibility of using the trap-assisted electron tunneling mechanisms to explain the high-field charge transfer through the buried oxides of UNIBOND and SIMOX SOI materials is considered. It is shown that considerable positive charge is accumulated near the buried oxide/substrate interface independently from the direction of the injection (from the film or from the silicon substrate) for UNIBOND and SIMOX SOI structures. Thermal stability of the charge trapped in the buried oxides is studied at temperatures ranging from 20 to 400OC. The theory is compared with the experimental data to find out the mechanisms of the generation of positive charge in UNIBOND and SIMOX buried oxides.

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Section: High-field Electron Injectionmentioning

confidence: 97%