Radio frequency plasma annealing of positive charge generated by Fowler–Nordheim electron injection in buried oxides in silicon

Abstract

Articles you may be interested inMechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection

Modification of MIS Devices by Radio-Frequency Plasma Treatment

“…Nowadays the radio-frequency (RF) plasma treatment is broadly utilized to improve characteristics of MOS devices [1][2][3][4][5][6][7][8][9][10][11]. One of its advantages is a possibility to use it in the final stage of manufacturing of integrated circuits after the metallization formation.…”

“…One of its advantages is a possibility to use it in the final stage of manufacturing of integrated circuits after the metallization formation. Papers [2][3][4][5][6][7][8][9] demonstrate that the radio-frequency plasma treatment allows to obtain both thermal annealing of the MOS device and non-thermal processes of neutralization, as well as annealing of charge in the dielectric and at the interface. As a result, at the RF plasma treatment, a reconstruction of silicon dioxide and Si/SiO 2 interface can take place.…”

CdSSe quantum dots: effect of the hydrogen RF plasma treatment on exciton luminescence

“…RF treatment with the power 1:5 W cm −2 and additional heating the sample up to 200 • C for 30 min was performed. These conditions of power and additional heating correspond to a sample temperature of about 300 • C [1]. This temperature was chosen to avoid QD growth.…”

“…The hydrogen RF plasma treatment is widely used to anneal e ectively the deep levels in the forbidden band of the near-surface Si layers in Si-SiO 2 structures implanted by small ion doses (D ¡ 10 14 cm −2 ) [1,2]. The temperatures do usually not exceed some 400 • C in these treatments with the e ciency of deep level annealing being comparable with those after thermal annealing at 700 -750 • C. Such possibility may be very helpful in the case of CdSSe quantum dots embedded into a borosilicate glass matrix that are extensively studied since the pioneering works by Bret [3], Borodulin [4] and Lisitsa [5], particularly because of their potential application in optical devices.…”

The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures

“…For example, RF plasma processing may cause enhanced defect annealing in the near surface of the silicon substrate [2][3][4][5] as well as at the silicondioxide/silicon (SiO 2 /Si) interface and within the oxide [1,7]. It has recently been shown [8] that such a treatment also leads to efficient removal of the positive charge generated in the buried oxide of SIMOX (separation-by-implanted-oxygen) by strong-field electron injection. Similarly, enhancement of the photoluminescence (PL) intensity over the red portion of the electromagnetic spectrum has been observed in high-dose Si-implanted SiO 2 following plasma processing, and this effect has been attributed to the annealing of defects at the SiO 2 /Si interfaces of the Si nanoclusters embedded within the oxide matrix [9].…”