This paper reports the results of a study of a water-gas shift reaction over nickel-ceria catalysts with different metal loading. Within this study, the overall CO conversion and observed kinetic behavior were investigated over the temperature range of 250-550 • C in different reactor configurations (fixed-bed and microchannel reactors). The quasi-steady state kinetics of the CO water-gas shift reaction was studied for fractions of Ni-containing cerium oxide catalysts in fixed-bed experiments at lab-scale level using a very dilute gas (1% CO + 1.8% H 2 O in He). A set of experiments with a microchannel reactor was performed using the feed composition (CO:H 2 O:H 2 :N 2 = 1:2:2:2), representing a product gas from methane partial oxidation. The results were interpreted using computational models. The kinetic parameters were determined by regression analysis, while mechanistic aspects were considered only briefly. Simulation of the WGS reaction in the microreactor was also carried out by using the COMSOL Multiphysics program.

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In this study, a modified technique of control current stress to investigation thin gate dielectric of MIS structures is proposed. This technique allows to monitor charge trapping in gate dielectric of MIS structures under high‐field and another stress situations (irradiation, plasma, hot carriers, etc.). The technique also may be used for testing thin gate dielectric defects. Unlike simple techniques, for example constant current stress and J‐ramp current stress, the proposed method uses a sequence of stress current and measuring current pulses. At the same time, the processes of charging and discharging of the MIS structure capacitance as well as the charge trapping in the gate dielectric are taken into account. Charging of MIS structure from inversion to accumulation modes or back way allows one to retrieve a low frequency capacitive‐voltage characteristic. Account charging capacitance of MIS structure and charge trapping in gate dielectric at injective mode lets considerably increase metrological characteristics of this technique and reduce inaccuracies. The models describing the change in the charge state of MIS structures, both in the charge capacity, and in the mode of injection of charge carriers were developed. Using these models let to choose optimal algorithm of current stress and increase measurement accuracy. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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