Interfacial Thermal Conductance of Transfer‐Printed Metal Films

Oh, Dong Wook; Kim, Seok; Li, Jinghua; Cahill, David G.; Sinha, Sanjiv

doi:10.1002/adma.201102994

Cited by 64 publications

(60 citation statements)

References 31 publications

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“…[3][4][5][6][7][8][9][10][11][12][13] Factors that cause the average value of t ω to be significantly less than unity have been well . Therefore, the SrRuO 3 /SrTiO 3 system has strong interfacial bonds, a commensurate chemical structure and commensurate bonds on both sides of the interface, with a lattice mismatch of only 0.6% at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Thermal conductance of strongly bonded metal-oxide interfaces

et al. 2015

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We report the results of time-domain thermoreflectance (TDTR) measurements of two strongly bonded metal-oxide systems with unusually large thermal conductances. We find that TDTR data for epitaxial SrRuO 3 /SrTiO 3 interface is consistent with an interface conductance G > 0.8 GW m -2 K -1. For an Al/MgO interface at a pressure of 60 GPa, we findBoth are within 40% of the maximum possible conductance for these systems, as predicted by simple theory.

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Section: Introductionmentioning

confidence: 99%

Thermal conductance of strongly bonded metal-oxide interfaces

et al. 2015

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“…Such metal-nonmetal interfaces typically have low ITR, with almost all values reported between 2.2 and 20 m 2 K/GW [10,12,. High-quality epitaxial interfaces, such as those between TiN and MgO, have been shown to have an even lower ITR of 1.4 m 2 K/GW [40].…”

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confidence: 99%

Thermal Resistance of Transferred-Silicon-Nanomembrane Interfaces

et al. 2015

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“…These values are comparable to those obtained from a reported time domain thermal reflectance (TDTR) measurement between sputtered Au and Au(Pd) alloys on SiO 2 , which are higher than that measured by TDTR between transferred Au and SiO 2 . 40 The relatively high interface thermal conductance values for the Si nanowire sample indicate that the high-temperature annealing process for removing the PMMA layer could have improved the thermal contact. In addition, the obtained R c,2 and R c,3 also increase slightly as the temperature decreases from 400 K to 100 K. Such temperature variation is consistent with the dependence of the thermal interface conductance on the specific heat, which decreases with decreasing temperature.…”

Section: Resultsmentioning

confidence: 98%

A four-probe thermal transport measurement method for nanostructures

Kim

Sellan

et al. 2015

Review of Scientific Instruments

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Several experimental techniques reported in recent years have enabled the measurement of thermal transport properties of nanostructures. However, eliminating the contact thermal resistance error from the measurement results has remained a critical challenge. Here, we report a different four-probe measurement method that can separately obtain both the intrinsic thermal conductance and the contact thermal resistance of individual nanostructures. The measurement device consists of four microfabricated, suspended metal lines that act as resistive heaters and thermometers, across which the nanostructure sample is assembled. The method takes advantage of the variation in the heat flow along the suspended nanostructure and across its contacts to the four suspended heater and thermometer lines, and uses sixteen sets of temperature and heat flow measurements to obtain nine of the thermal resistances in the measurement device and the nanostructure sample, including the intrinsic thermal resistance and the two contact thermal resistances to the middle suspended segment of the nanostructure. Two single crystalline Si nanowires with different cross sections are measured in this work to demonstrate the effectiveness of the method. This four-probe thermal transport measurement method can lead to future discoveries of unique size-dependent thermal transport phenomena in nanostructures and low-dimensional materials, in addition to providing reliable experimental data for calibrating theoretical models.

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Interfacial Thermal Conductance of Transfer‐Printed Metal Films

Cited by 64 publications

References 31 publications

Thermal conductance of strongly bonded metal-oxide interfaces

Thermal conductance of strongly bonded metal-oxide interfaces

Thermal Resistance of Transferred-Silicon-Nanomembrane Interfaces

A four-probe thermal transport measurement method for nanostructures

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