Ferromagnet/two-dimensional transition-metal dichalcogenide (FM/2D TMD) interfaces provide attractive opportunities to push magnetic information storage to the atomically thin limit. Existing work has focused on FMs contacted with mechanically exfoliated or chemically vapordeposition-grown TMDs, where clean interfaces cannot be guaranteed. Here, we report a reliable way to achieve contamination-free interfaces between ferromagnetic CoFeB and molecular-beam epitaxial MoSe 2 . We show a spin reorientation arising from the interface, leading to a perpendicular magnetic anisotropy (PMA), and reveal the CoFeB/2D MoSe 2 interface allowing for the PMA development in a broader CoFeB thickness-range than common systems such as CoFeB/MgO. Using X-ray magnetic circular dichroism analysis, we attribute generation of this PMA to interfacial d−d hybridization and deduce a general rule to enhance its magnitude. We also demonstrate favorable magnetic softness and considerable magnetic moment preserved at the interface and theoretically predict the interfacial band matching for spin filtering. Our work highlights the CoFeB/2D MoSe 2 interface as a promising platform for examination of TMD-based spintronic applications and might stimulate further development with other combinations of FM/2D TMD interfaces.

The direct growth of hexagonal boron nitride (h-BN) by industrially scalable methods is of broad interest for spintronic and nanoelectronic device applications. Such applications often require atomically precise control of film thickness and azimuthal registry between layers and substrate. We report the formation, by atomic layer epitaxy (ALE), of multilayer h-BN(0001) films (up to 7 monolayers) on Co(0001). The ALE process employs BCl3/NH3 cycles at 600 K substrate temperature. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) data show that this process yields an increase in h-BN average film thickness linearly proportional to the number of BCl3/NH3 cycles, with BN layers in azimuthal registry with each other and with the Co(0001) substrate. LEED diffraction spot profile data indicate an average BN domain size of at least 1900 Å. Optical microscopy data indicate the presence of some domains as large as ∼20 μm. Transmission electron microscopy (TEM) and ambient exposure studies demonstrate macroscopic and microscopic continuity of the h-BN film, with the h-BN film highly conformal to the Co substrate. Photoemission data show that the h-BN(0001) film is p-type, with band bending near the Co/h-BN interface. Growth of graphene by molecular beam epitaxy (MBE) is observed on the surface of multilayer h-BN(0001) at temperatures of 800 K. LEED data indicate azimuthal graphene alignment with the h-BN and Co(0001) lattices, with domain size similar to BN. The evidence of multilayer BN and graphene azimuthal alignment with the lattice of the Co(0001) substrate demonstrates that this procedure is suitable for scalable production of heterojunctions for spintronic applications.

We have measured the spin injection efficiency and spin lifetime in Co2FeSi/n-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large (∼40 µV) spin valve signals at room temperature and injector currents of 10 3 A/cm 2 , facilitated by fabricating spin valve separations smaller than the 1 µm spin diffusion length and applying a forward bias to the detector contact. The spin transport parameters are measured by comparing the injector-detector contact separation dependence of the spin valve signal with a numerical model accounting for spin drift and diffusion. The apparent suppression of the spin injection efficiency at the lowest temperatures reflects a breakdown of the ordinary drift-diffusion model in the regime of large spin accumulation. A theoretical calculation of the D'yakonov-Perel spin lifetime agrees well with the measured n-GaAs spin lifetime over the entire temperature range. arXiv:1610.03797v1 [cond-mat.mes-hall]

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Re-dispersible Tb(3+) doped LaPO(4) nanorods have been prepared using ethylene glycol (EG) as a capping agent as well as reaction medium at a relatively low temperature of 150 °C. The X-ray diffraction study reveals that all the doped samples are well crystalline with a monoclinic structure of the LaPO(4) phase. The luminescence intensity of (5)D(4)→(7)F(5) transition at 543 nm (green) is more prominent than that of (5)D(4)→(7)F(6) transition at 487 nm (blue) for all the samples. This is related to the polarizing effect from [PO(4)](3-) to the Tb(3+) site. Concentration dependent luminescence study shows that the luminescence intensity of Tb(3+) increases up to 10 at.% and decreases above this. This is due to the concentration quenching effect arising from cross relaxation among Tb(3+)-Tb(3+) ions. The results show that nanoparticles prepared in EG medium gives an enhanced luminescence compared to that prepared in water. This is attributed to the multiphonon relaxation effect from O-H groups surrounding over nanoparticles as well as the extent of increase of agglomeration among particles for samples prepared in water. Significant enhancement in the emission of Tb(3+) is also observed when Ce(3+) is used as the sensitizer in LaPO(4):Tb(3+)nanorods. The optimum concentration of Ce(3+) for maximum luminescence is found to be 7 at.% in Ce(3+) sensitized LaPO(4):Tb(3+) (5 at.%). Based on the energy transfer process from Ce(3+) to Tb(3+), the luminescence of Tb(3+) can be switched OFF and ON by performing oxidation and reduction of Ce(3+)↔Ce(4+) using KMnO(4) and ascorbic acid, respectively. The samples are re-dispersible in water, methanol and can be incorporated into polyvinyl alcohol (PVA) films. They show a dark green emission under ultraviolet radiation.

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While direct bandgap monolayer 2D transition metal dichalcogenides (TMDs) have emerged as an important optoelectronic material due to strong light−matter interactions, their multilayer counterparts exhibit an indirect bandgap resulting in poor photon emission quantum yield. We report strong direct bandgap-like photoluminescence at ∼1.9 eV from multilayer MoS 2 grown on SrTiO 3 , whose intensity is significantly higher than that observed in multilayer MoS 2 / SiO 2 . Using high-resolution electron microscopy we observe interlayer twist and >8% increase in the van der Waals gap, which leads to weaker interlayer coupling. This affects the evolution of the band structure in multilayer MoS 2 as probed by transient absorption spectroscopy, causing higher photo carrier recombination at the direct gap. Our results provide a platform that could enable multilayer TMDs for robust optical device applications.