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Tungsten deposited with lanthanum hexaboride (LaBe) is of interest, as LaBe is characterized by the properties of an excellent electron emitter. This note reports a field emission study of the Lah/tungsten system prepared by depositing La& in situ on to a tungsten tip. The observed maximum decrease in the average work-function was from 452 eV (clean tungsten) to 1.75 eV (LaBe deposited on tungsten). The field emission pattern of tungsten deposited with LaB6 shows preferential adsorption around the (1 11 ] and { 100) planes.

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