Thermal Resistance of Transferred-Silicon-Nanomembrane Interfaces

Schroeder, Daniel P.; Akšamija, Zlatan; Rath, Ashutosh; Voyles, Paul M.; Lagally, M. G.; Eriksson, M. A.

doi:10.1103/physrevlett.115.256101

Cited by 36 publications

(29 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A better match between the elastic moduli of the crystalline materials is indicative of a better overlap in the vibrational DOS of the materials, which along with a high quality of interface, usually results in higher values of h K . For example, it has been shown that by controlling the surface conditions between two silicon membranes that are mechanically joined via van der Waals (vdW) interactions, h K can be varied by as much as 300% . Likewise, epitaxial interfaces formed between well lattice matched materials such as SRuO 3 /SrTiO 3 and TiN/MgO interfaces have demonstrated some of the highest measured values of phonon dominated h K > 700 MW m −2 K −1 .…”

Section: Introductionmentioning

confidence: 99%

A Review of Experimental and Computational Advances in Thermal Boundary Conductance and Nanoscale Thermal Transport across Solid Interfaces

Giri

Hopkins

2019

Adv Funct Materials

208

152

View full text Add to dashboard Cite

Interfacial thermal resistance is the primary impediment to heat flow in materials and devices as characteristic lengths become comparable to the mean‐free paths of the energy carriers. This thermal boundary conductance across solid interfaces at the nanoscale can affect a plethora of applications. The recent experimental and computational advances that have led to significant atomistic insights into the nanoscopic thermal transport mechanisms at interfaces between various types of materials are summarized. The authors focus on discussions of works that have pushed the limits to interfacial heat transfer and drastically increased the understanding of thermal boundary conductance on the atomic and nanometer scales near solid/solid interfaces. Specifically, the role of localized interfacial modes on the energy conversion processes occurring at interfaces is emphasized in this review. The authors also focus on experiments and computational works that have challenged the traditionally used phonon gas models in interpreting the physical mechanisms driving interfacial energy transport. Finally, the authors discuss the future directions and avenues of research that can further the knowledge of heat transfer across systems with broken symmetries.

show abstract

Section: Introductionmentioning

confidence: 99%

A Review of Experimental and Computational Advances in Thermal Boundary Conductance and Nanoscale Thermal Transport across Solid Interfaces

Giri

Hopkins

2019

Adv Funct Materials

208

152

View full text Add to dashboard Cite

show abstract

“…The TBC of mechanically joined materials could be as low as 0.1 MW/m 2 -K while the interfacial thermal conductance of transfer-printed metal films is in the range of 10-40 MW/m 2 -K. [15][16][17][18][19] Thermal transport across Van der Waals interfaces is limited by the real contact area and low phonon transmission due to weak adhesion energy even if there exists the possibility to achieve a high TBC. [20][21][22] Thermal transport across these interfaces remains an open issue due to the limited amount of experimental data available in the literature. Therefore, it is of great significance to study the thermal conductance across Ga2O3-diamond interfaces for both real-world power electronics applications and fundamental thermal science of heat transport across Van der Waals interfaces.…”

Section: Introductionmentioning

confidence: 99%

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

et al. 2019

View full text Add to dashboard Cite

Because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt, β-Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conductivity is significantly lower than those of other wide bandgap semiconductors, such as AlN, SiC, GaN, and diamond. To ensure reliable operation with minimal self-heating at high power, proper thermal management is even more essential for Ga2O3 devices. Similarly to the past approaches aiming to alleviate selfheating in GaN high electron mobility transistors (HEMTs), a possible solution has been to integrate thin Ga2O3 membranes with diamond to fabricate Ga2O3-on-diamond lateral metalsemiconductor field-effect transistor (MESFET) or metal-oxide-semiconductor field-effect transistor (MOSFET) devices by taking advantage of the ultra-high thermal conductivity of diamond. Even though the thermal boundary conductance (TBC) between wide bandgap semiconductor devices such as GaN HEMTs and a diamond substrate is of primary importance for heat dissipation in these devices, fundamental understanding of the Ga2O3/diamond thermal interface is still missing. In this work, we study the thermal transport across the interfaces of Ga2O3 exfoliated onto a single crystal diamond. The Van der Waals bonded Ga2O3-diamond TBC is measured to be 17 -1.7/+2.0 MW/m 2 -K, which is comparable to the TBC of several physical-vapor-deposited metals on diamond. A Landauer approach is used to help understand phonon transport across perfect Ga2O3-diamond interface, which in turn sheds light on the possible TBC one could achieve with an optimized interface. A reduced thermal conductivity of the Ga2O3 nano-membrane is also observed due to additional phonon-membrane boundary scattering. The impact of the Ga2O3-substrate TBC and substrate thermal conductivity on the thermal performance of a power device are modeled and discussed. Without loss of generality, this study is not only important for Ga2O3 power electronics applications which would not be realistic without a thermal management solution, but also for the fundamental thermal science of heat transport across Van der Waals bonded interfaces.

show abstract

“…For example, in ref. , it is shown that by controlling the surface condition between crystalline silicon nanomembranes mechanically joined on to silicon substrates through van der Waals interactions, the TBC can be tuned by as much as 300%. However, for interfaces comprising of amorphous solids, the measured TBCs can be relatively higher even for interfaces between materials with highly mismatched elastic moduli.…”

mentioning

confidence: 99%

“…Experimentally measured thermal boundary conductance versus ratio of the elastic moduli of the two constituent materials (for Si/SiO 2 , Al/diamond, Pt/diamond, Al/SiC, Au/GaN, Al/Ge, GaN/SiC, TiN/MgO, SrRuO 3 /SrTiO 3 , Pt/Al 2 O 3 , ZnO/GaN, ZnO/HQ/ZnO, Si/vdW (van der Waals interface)/Si, Bi/Si, Mo/Si, Al/Si, Ni/Si, Cr/Si, Pt/Si, Au/Si, NiSi/Si, and CoSi 2 /Si).…”

mentioning

confidence: 99%

Interfacial Defect Vibrations Enhance Thermal Transport in Amorphous Multilayers with Ultrahigh Thermal Boundary Conductance

et al. 2018

View full text Add to dashboard Cite

The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC). However, recent computational studies have suggested that interfacial defects can enhance this thermal boundary conductance through the emergence of unique vibrational modes intrinsic to the material interface and defect atoms, a finding that contradicts traditional theory and conventional understanding. By manipulating the local heat flux of atomic vibrations that comprise these interfacial modes, in principle, the TBC can be increased. In this work, experimental evidence is provided that interfacial defects can enhance the TBC across interfaces through the emergence of unique high-frequency vibrational modes that arise from atomic mass defects at the interface with relatively small masses. Ultrahigh TBC is demonstrated at amorphous SiOC:H/SiC:H interfaces, approaching 1 GW m K and are further increased through the introduction of nitrogen defects. The fact that disordered interfaces can exhibit such high conductances, which can be further increased with additional defects, offers a unique direction to manipulate heat transfer across materials with high densities of interfaces by controlling and enhancing interfacial thermal transport.

show abstract

Thermal Resistance of Transferred-Silicon-Nanomembrane Interfaces

Cited by 36 publications

References 52 publications

A Review of Experimental and Computational Advances in Thermal Boundary Conductance and Nanoscale Thermal Transport across Solid Interfaces

A Review of Experimental and Computational Advances in Thermal Boundary Conductance and Nanoscale Thermal Transport across Solid Interfaces

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

Interfacial Defect Vibrations Enhance Thermal Transport in Amorphous Multilayers with Ultrahigh Thermal Boundary Conductance

Contact Info

Product

Resources

About