Ischemic stroke is a devastating disease and one of the leading causes of mortality worldwide. Overproduction of reactive oxygen and nitrogen species (RONS) following ischemic insult is known as a key factor in exacerbating brain damage. Thus, RONS scavengers that can block excessive production of RONS have great therapeutic potential. Herein, we propose an efficient treatment strategy in which an artificial nanozyme with multienzyme activity drives neuroprotection against ischemic stroke primarily by scavenging RONS. Specifically, through a facile, Bi 3+ -assisted, template-free synthetic strategy, we developed hollow Prussian blue nanozymes (HPBZs) with multienzyme activity to scavenge RONS in a rat model of ischemic stroke. The comprehensive characteristics of HPBZs against RONS were explored. Apart from attenuating oxidative stress, HPBZs also suppressed apoptosis and counteracted inflammation both in vitro and in vivo, thereby contributing to increased brain tolerance of ischemic injury with minimal side effects. This study provides a proof of concept for a novel class of neuroprotective nanoagents that might be beneficial for treatment of ischemic stroke and other RONS-related disorders.

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evere acute respiratory syndrome coronavirus 2 (SARS-CoV-2) has caused a global pandemic of coronavirus disease 2019 (COVID-19), with over 84.66 million infections and 1.83 million deaths as reported on 3 January 2021 (refs. 1,2). SARS-CoV-2 is a positive-sense, single-stranded RNA virus. SARS-CoV-2 and several related beta-coronaviruses, including SARS-CoV and Middle East respiratory syndrome coronavirus (MERS-CoV), are highly pathogenic. Infections can lead to severe acute respiratory syndrome, loss of lung function and, in severe cases, death. Compared to SARS-CoV and MERS-CoV, SARS-CoV-2 has a higher capacity of human-to-human infections, which resulted in the rapidly growing pandemic 3. Finding an effective treatment for COVID-19, potentially also through drug repurposing, is an urgent but unmet medical need. Suramin (Fig. 1a) is a century-old drug that has been used to treat African sleeping sickness and river blindness 4,5. It has also been shown to be effective in inhibiting the replication of a wide range of viruses, including enteroviruses 6 , Zika virus 7 , Chikungunya 8 and Ebola viruses 9. The viral inhibition mechanisms of suramin are diverse, including inhibition of viral attachment, viral entry and release from host cells in part through interactions with viral capsid proteins 7,8,10,11. Recently, suramin has been shown to inhibit SARS-CoV-2 infection in cell culture by preventing cellular entry of the virus 12. Here we report that suramin is also a potent inhibitor of the SARS-CoV-2 RNA-dependent RNA polymerase (RdRp), an essential enzyme for the viral life cycle. The potency of suramin in biochemical RdRp inhibition assays is at least 20-fold more potent than remdesivir, the current Food and Drug Administration-approved nucleotide drug for the treatment of COVID-19. The activity of suramin in cell-based viral inhibition is similar to remdesivir because the highly negative charge of suramin prevents efficient cellular uptake. A cryogenic electron microscopy (cryo-EM) structure reveals that suramin binds to the RdRp active site, blocking the binding of both RNA template and primer strands. These results provide a structural template for the design of next generation suramin derivatives as SARS-CoV-2 RdRp inhibitors. Structural basis for inhibition of the SARS-CoV-2 RNA polymerase by suramin Wanchao Yin 1,

Interleukin 35 (IL-35) is a novel member of the IL-12 family, consisting of an EBV-induced gene 3 (EBI3) subunit and a P35 subunit. IL-35 is an immune-suppressive cytokine mainly produced by regulatory T cells. However, the role of IL-35 in cancer metastasis and progression is not well understood. Here we demonstrate that IL-35 is overexpressed in human pancreatic ductal adenocarcinoma (PDAC) tissues, and that IL-35 overexpression is associated with poor prognosis in PDAC patients. IL-35 has critical roles in PDAC cell extravasation and metastasis by facilitating the adhesion to endothelial cells and transendothelial extravasation. Mechanistically, IL-35 promotes ICAM1 overexpression through a GP130-STAT1 signalling pathway, which facilitates endothelial adhesion and transendothelial migration via an ICAM1–fibrinogen–ICAM1 bridge. In an orthotopic xenograft model, IL-35 promotes spontaneous pancreatic cancer metastasis in an ICAM1-dependent manner. Together, our results indicate additional functions of IL-35 in promoting PDAC metastasis through mediating ICAM1 expression.

We report for the first time the preparation of highly stable graphene (GE)-based nanofluids with ionic liquid as base fluids (ionic liquid-based nanofluids (Ionanofluids)) without any surfactant and the subsequent investigations on their thermal conductivity, specific heat, and viscosity. The microstructure of the GE and MWCNTs are observed by transmission electron microscope. Thermal conductivity (TC), specific heat, and viscosity of these Ionanofluids were measured for different weight fractions and at varying temperatures, demonstrating that the Ionanofluids exhibit considerably higher TC and lower viscosity than that of their base fluids without significant specific heat decrease. An enhancement in TC by about 15.5% and 18.6% has been achieved at 25 °C and 65 °C respectively for the GE-based nanofluid at mass fraction of as low as 0.06%, which is larger than that of the MWCNT-dispersed nanofluid at the same loading. When the temperature rises, the TC and specific heat of the Ionanofluid increase clearly, while the viscosity decreases sharply. Moreover, the viscosity of the prepared Ionanofluids is lower than that of the base fluid. All these advantages of this new kind of Ionanofluid make it an ideal fluid for heat transfer and thermal storage.

GaN-based high electron mobility transistors have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and reliability. Increasing the thermal boundary conductance (TBC) between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal conductivity of the SiC substrate. However, a good understanding of the TBC of this technically important interface is still lacking due to the complicated nature of interfacial heat transport. With the AlN being the typical interfacial layer between GaN and SiC, there are issues concerning the quality of the AlN as well as the defects that are contained in the GaN near this growth interface which can impede heat flow. In this work, a lattice-mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether. This allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface. Time-domain thermoreflectance (TDTR) is used to measure the thermal properties of the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of GaN grown by molecular-beam epitaxy (MBE) on SiC,showing the impact of reducing the dislocations in the GaN near the interface. High GaN-SiC TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface whose TBC (230 MW/m 2 -K) is close to the highest values ever reported. Thus, this method provides the benefit of both a high TBC with higher GaN thermal conductivity near the interface to aid in heat dissipation. To understand the structure-thermal property relation, STEM and EELS are used to characterize the interface structure. The results show that, for the as-bonded sample, there exists an amorphous layer near the interface for the as bonded samples. This amorphous layer is crystallized upon annealing, leading to the high TBC found in our work. Our work not only paves the way for thermal transport across bonded interfaces where bonding and local chemistry are tunable, which will enable and stimulate future study of new theory of interfacial thermal transport mechanism, but also impact real-world applications of semiconductor integration and packaging where thermal dissipation always plays an important role.

Because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt, β-Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conductivity is significantly lower than those of other wide bandgap semiconductors, such as AlN, SiC, GaN, and diamond. To ensure reliable operation with minimal self-heating at high power, proper thermal management is even more essential for Ga2O3 devices. Similarly to the past approaches aiming to alleviate selfheating in GaN high electron mobility transistors (HEMTs), a possible solution has been to integrate thin Ga2O3 membranes with diamond to fabricate Ga2O3-on-diamond lateral metalsemiconductor field-effect transistor (MESFET) or metal-oxide-semiconductor field-effect transistor (MOSFET) devices by taking advantage of the ultra-high thermal conductivity of diamond. Even though the thermal boundary conductance (TBC) between wide bandgap semiconductor devices such as GaN HEMTs and a diamond substrate is of primary importance for heat dissipation in these devices, fundamental understanding of the Ga2O3/diamond thermal interface is still missing. In this work, we study the thermal transport across the interfaces of Ga2O3 exfoliated onto a single crystal diamond. The Van der Waals bonded Ga2O3-diamond TBC is measured to be 17 -1.7/+2.0 MW/m 2 -K, which is comparable to the TBC of several physical-vapor-deposited metals on diamond. A Landauer approach is used to help understand phonon transport across perfect Ga2O3-diamond interface, which in turn sheds light on the possible TBC one could achieve with an optimized interface. A reduced thermal conductivity of the Ga2O3 nano-membrane is also observed due to additional phonon-membrane boundary scattering. The impact of the Ga2O3-substrate TBC and substrate thermal conductivity on the thermal performance of a power device are modeled and discussed. Without loss of generality, this study is not only important for Ga2O3 power electronics applications which would not be realistic without a thermal management solution, but also for the fundamental thermal science of heat transport across Van der Waals bonded interfaces.

Conventional diffusion imaging techniques are not sufficiently accurate for evaluating glioma grade and cellular proliferation, which are critical for guiding glioma treatment. Diffusion kurtosis imaging (DKI), an advanced non-Gaussian diffusion imaging technique, has shown potential in grading glioma; however, its applications in this tumor have not been fully elucidated. In this study, DKI and diffusion weighted imaging (DWI) were performed on 74 consecutive patients with histopathologically confirmed glioma. The kurtosis and conventional diffusion metric values of the tumor were semi-automatically obtained. The relationships of these metrics with the glioma grade and Ki-67 expression were evaluated. The diagnostic efficiency of these metrics in grading was further compared. It was demonstrated that compared with the conventional diffusion metrics, the kurtosis metrics were more promising imaging markers in distinguishing high-grade from low-grade gliomas and distinguishing among grade II, III and IV gliomas; the kurtosis metrics also showed great potential in the prediction of Ki-67 expression. To our best knowledge, we are the first to reveal the ability of DKI to assess the cellular proliferation of gliomas, and to employ the semi-automatic method for the accurate measurement of gliomas. These results could have a significant impact on the diagnosis and subsequent therapy of glioma.