We report the in-plane thermal conductivity of suspended exfoliated few-layer molybdenum disulfide (MoS 2) samples that were measured by suspended micro-devices with integrated resistance thermometers. The obtained room-temperature thermal conductivity values are (44-50) and (48-52) W m À1 K À1 for two samples that are 4 and 7 layers thick, respectively. For both samples, the peak thermal conductivity occurs at a temperature close to 120 K, above which the thermal conductivity is dominated by intrinsic phonon-phonon scattering although phonon scattering by surface disorders can still play an important role in these samples especially at low temperatures. V

The anisotropic basal-plane thermal conductivities of thin black phosphorus obtained from a new four-probe measurement exhibit much higher peak values at low temperatures than previous reports. First principles calculations reveal the important role of crystal defects and weak thickness dependence that is opposite to the case of graphene and graphite due to the absence of reflection symmetry in puckered phosphorene.

Continuous ultrathin graphite foams (UGFs) have been actively researched recently to obtain composite materials with increased thermal conductivities. However, the large pore size of these graphitic foams has resulted in large thermal resistance values for heat conduction from inside the pore to the high thermal conductivity graphitic struts. Here, we demonstrate that the effective thermal conductivity of these UGF composites can be increased further by growing long CNT networks directly from the graphite struts of UGFs into the pore space. When erythritol, a phase change material for thermal energy storage, is used to fill the pores of UGF-CNT hybrids, the thermal conductivity of the UGF-CNT/erythritol composite was found to increase by as much as a factor of 1.8 compared to that of a UGF/erythritol composite, whereas breaking the UGF-CNT bonding in the hybrid composite resulted in a drop in the effective room-temperature thermal conductivity from about 4.1 ± 0.3 W m(-1) K(-1) to about 2.9 ± 0.2 W m(-1) K(-1) for the same UGF and CNT loadings of about 1.8 and 0.8 wt %, respectively. Moreover, we discovered that the hybrid structure strongly suppresses subcooling of erythritol due to the heterogeneous nucleation of erythritol at interfaces with the graphitic structures.

No abstract

Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250 K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186 ± 46) W m−1 K−1 is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. The foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.