Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters

Petti, Luisa; Bottacchi, Francesca; Münzenrieder, Niko; Faber, Hendrik; Cantarella, Giuseppe; Vogt, Christian; Büthe, Lars; Namal, İmge; Späth, Florian; Hertel, Tobias; Anthopoulos, Thomas D.; Tröster, Gerhard

doi:10.1109/iedm.2014.7047113

Cited by 13 publications

(22 citation statements)

References 5 publications

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“…102 Nevertheless, smaller I ON /I OFF can also result in successful switching operation. 103 For analog circuits, a current on/off ratio of >10 4 is typically sufficient. 80 d. Sub-threshold swing.…”

Section: =2mentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

545

430

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Section: =2mentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

545

430

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“…Over the last several years, semiconducting single-walled carbon nanotubes (SWNTs) have been employed in a wide range of optoelectronic devices, including field-effect transistors [1][2][3][4][5][6] (FETs), solar cells, [7] integrated circuits, [8][9][10] radio frequency ID (RFID) antennas [11] and lightemitting devices. [12,13] In addition to their attractive electronic properties, SWNTs can be easily solution-processed, hence making them extremely attractive for application in plastic microelectronics.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Charge Percolation Analysis in Polymer‐Sorted (7,5) Single‐Walled Carbon Nanotube Networks

Bottacchi

Späth

et al. 2016

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The current percolation in polymer-sorted semiconducting (7,5) single-walled carbon nanotube (SWNT) networks, processed from solution, is investigated using a combination of electrical field-effect measurements, atomic force microcopy (AFM) and conductive AFM (C-AFM) techniques. From AFM measurements, the nanotube length in the as-processed (7,5) SWNTs network is found to range from ~100 nm to ~1500 nm, with a SWNT surface density well above the percolation threshold and a maximum surface coverage ≈ 58%. Analysis of the field-effect charge transport measurements in the SWNT network using a two-dimensional -2 -plane and reveal the isotropic nature of the as-spun (7,5) SWNT networks. This work demonstrates the tremendous potential of combining advanced scanning probe techniques with field-effect charge transport measurements for quantification of key network parameters including current percolation, surface coverage and degree of SWNT alignment. Most importantly, the proposed approach is general and applicable to other nanoscale networks, including metallic nanowires as well as hybrid nano-composites.

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“…However, this approach lacks the advantages of CMOS which enables low power consumption, high gain, superior noise immunity and simplified circuit design [5]. Recently, efforts have been undertaken to realize complementary technology with oxide semiconductors involving p-type carbon nanotubes [2,6,7] or p-type SnO [5]. GST is an alloy of Ge, Sb and Te belonging to the family of chalcogenide glasses.…”

Section: Introductionmentioning

confidence: 99%

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

Daus¹,

Han²,

Knobelspies³

et al. 2017

2017 IEEE International Electron Devices Meeting (IEDM)

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Abstract-Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al2O3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.

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Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters

Cited by 13 publications

References 5 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Nanoscale Charge Percolation Analysis in Polymer‐Sorted (7,5) Single‐Walled Carbon Nanotube Networks

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

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