Metal oxide semiconductor thin-film transistors for flexible electronics

Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

doi:10.1063/1.4953034

Cited by 547 publications

(469 citation statements)

References 343 publications

(1,518 reference statements)

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“…Although these devices are currently the fastest flexible oxide TFTs [3], even higher frequencies of e.g. organic or oxide TFTs are desirable in the future.…”

Section: B Unity Power Gain Frequencymentioning

confidence: 99%

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Münzenrieder

Ishida

Meister

et al. 2018

IEEE Electron Device Lett.

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Abstract-In this letter, the AC performance and influence of bending on flexible IGZO thin-film transistors, exhibiting a maximum oscillation frequency (maximum power gain frequency) fmax beyond 300 MHz, are presented. Self-alignment was used to realize TFTs with channel length down to 0.5 µm. The layout of this TFTs was optimized for good AC performance. Besides the channel dimensions this includes ground-signal-ground contact pads. The AC performance of this short channel devices was evaluated by measuring their two port scattering parameters. These measurements were used to extract the unity gain power frequency from the maximum stable gain and the unilateral gain. The two complimentary definitions result in fmax values of (304 ± 12) MHz and (398 ± 53) MHz, respectively. Furthermore, the transistor performance is not significantly altered by mechanical strain. Here, fmax reduces by 3.6 % when a TFT is bent to a tensile radius of 3.5 mm.

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“…Although these devices are currently the fastest flexible oxide TFTs [3], even higher frequencies of e.g. organic or oxide TFTs are desirable in the future.…”

Section: B Unity Power Gain Frequencymentioning

confidence: 99%

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Münzenrieder

Ishida

Meister

et al. 2018

IEEE Electron Device Lett.

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“…Moreover, the novelty of the fabrication and characterization of an opamp and a logic circuit (implemented with 13 and 32 a-IGZO TFTs, respectively) using three metal layers have highlighted notable performance improvements. In particular, by reducing the parasitics C p and R p , the opamp shows an increase of the gain (+4.7 %), of the bandwidth (+5.9 %), and of GBWP (+16.9 %), together with one of the highest complexity ever achieved within similar circuits based on metal oxide semiconductors [7]. Furthermore, the logic circuit for mechanical switch control has been fabricated for the first time on a flexible substrate and yields a reduction in all the delays (average decrease in the order of 38 %).…”

Section: Discussionmentioning

confidence: 99%

“…Oxide semiconductors, and in particular amorphous a-IGZO, provide electron mobility µ ef f > 10 cm 2 /Vs [7], well above the standard values obtained for organic materials and amorphous-Si [8], [9]. After modeling all the transistor parameters for DC and AC characteristics [10], we studied the implementation of the two circuits using two metals layers (1 st metal: gate layer, 2 nd metal: source, drain and interconnections) and three metals (1 st metal: gate layer, 2 nd metal: source and drain, 3 rd metal: interconnections) for the first time (see Fig.…”

Section: Introductionmentioning

confidence: 99%

Flexible In–Ga–Zn–O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study

Cantarella

Ishida

Petti

et al. 2016

IEEE Electron Device Lett.

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Abstract-The quest for high-performance flexible circuits call for scaling of the minimum feature size in Thin-Film Transistors (TFTs). Although reduced channel lengths can guarantee an improvement in the electrical properties of the devices, proper design rules also play a crucial role to minimize parasitics when designing fast circuits. In this letter, systematic Computer-Aided Design (CAD) simulations have guided the fabrication of highperformance flexible operational amplifiers (opamps) and logic circuits based on Indium-Gallium-Zinc-Oxide (IGZO) TFTs. In particular, the performance improvements due to the use of an additional third metal layer for the interconnections has been estimated for the first time. Encouraged by the simulated enhancements resulting by the decreased parasitic resistances and capacitances, both TFTs and circuits have been realized on a free-standing 50 µm thick polymide foil using three metal layers. Despite the thicker layer stack, the TFTs have shown mechanical stability down to 5 mm bending radii. Moreover, the opamps and the logic circuits have yielded improved electrical performance with respect to the architecture with two metal layers: gainbandwidth-product (GBWP) increased by 16.9 %, for the first one, and propagation delay (t pd ) decreased by 43 %, for the latter one.

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“…В последнее время наблюдается заметный рост публи-каций, посвященных росту оксидов меди, цинка, галлия и других металлов [1][2][3][4][5][6][7][8][9][10]. Интерес к оксидам опре-деляется в первую очередь их уникальными полупро-водниковыми свойствами.…”

Section: Introductionunclassified

Формирование кристаллических слоев Cu-=SUB=-2-=/SUB=-O и ZnO методом магнетронного распыления и их оптическая характеризация

Агекян¹,

Borisov²,

Gudovskikh³

et al. 2018

Физика И Техника Полупроводников

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Copper (I) oxide and zinc oxide films are formed on silicon and glassy quartz substrates by magnetron assisted sputtering. The thickness of the films is tens and hundreds of nanometers. The films are grown at different substrate temperatures and different oxygen pressures in the working chamber. The film samples are studied by the X-ray diffraction technique, scanning electron microscopy, and optical methods. It is established that an increase in the substrate temperature yields a change in the surface morphology of copper (I) oxide films towards the formation of well-pronounced crystallites. The reflectance and Raman spectra suggest that the quality of such films is close to that of bulk Cu_2O crystals produced by the oxidation of copper. As concerns ZnO films, an increase in the substrate temperature and an increase in the partial oxygen pressure make it possible to produce films, for which a sharp exciton structure is observed in the reflectance spectra and the emission of excitons bound at donors is observed in the luminescence spectra.

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Metal oxide semiconductor thin-film transistors for flexible electronics

Cited by 547 publications

References 343 publications

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Flexible In–Ga–Zn–O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study

Формирование кристаллических слоев Cu-=SUB=-2-=/SUB=-O и ZnO методом магнетронного распыления и их оптическая характеризация

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