Flexible InGaZnO TFTs With ${f}$  $_{\textsf{max}}$  Above 300 MHz

Münzenrieder, Niko; Ishida, Koichi; Meister, Tilo; Cantarella, Giuseppe; Petti, Luisa; Carta, Corrado; Ellinger, Frank; Tröster, Gerhard

doi:10.1109/led.2018.2854362

Cited by 28 publications

(18 citation statements)

References 20 publications

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“…Munzenrieder et al used a self-alignment process to realize a BCE As the technology is developing, the application of oxide-based TFTs is not restricted to displays. For example, TFTs have been employed in integrated circuits, like ring oscillators, amplifiers, logic gates, radiofrequency identification (RFID) systems and so on [39,53,55,90,94,95,[163][164][165][166][167][168][169]. It is necessary for TFTs to enhance their maximum power gain frequency and to reduce the parasitic capacitance between electrodes.…”

Section: Polyimide (Pi) Flexible Substratementioning

confidence: 99%

“…It is necessary for TFTs to enhance their maximum power gain frequency and to reduce the parasitic capacitance between electrodes. Munzenrieder et al used a self-alignment process to realize a BCE structure with a channel with a length of 0.5 µm [163]. There, the maximum oscillation frequency (maximum power gain frequency) f max was extracted to be >300 MHz, giving hope that the device can be applied to high-frequency applications.…”

Section: Polyimide (Pi) Flexible Substratementioning

confidence: 99%

“…When combined with analog or logical circuits, this sensor could be realized for actual applications. structure with a channel with a length of 0.5 μm [163]. There, the maximum oscillation frequency (maximum power gain frequency) fmax was extracted to be >300 MHz, giving hope that the device can be applied to high-frequency applications.…”

Section: Polyimide (Pi) Flexible Substratementioning

confidence: 99%

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Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

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Oxide semiconductors have drawn much attention in recent years due to their outstanding electrical performance, such as relatively high carrier mobility, good uniformity, low process temperature, optical transparency, low cost and especially flexibility. Flexible oxide-based thin film transistors (TFTs) are one of the hottest research topics for next-generation displays, radiofrequency identification (RFID) tags, sensors, and integrated circuits in the wearable field. The carrier transport mechanism of oxide semiconductor materials and typical device configurations of TFTs are firstly described in this invited review. Then, we describe the research progress on flexible oxide-based TFTs, including representative TFTs fabricated on different kinds of flexible substrates, the mechanical stress effect on TFTs and optimized methods to reduce this effect. Finally, an outlook for the future development of oxide-based TFTs is given.

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Section: Polyimide (Pi) Flexible Substratementioning

confidence: 99%

Section: Polyimide (Pi) Flexible Substratementioning

confidence: 99%

Section: Polyimide (Pi) Flexible Substratementioning

confidence: 99%

See 1 more Smart Citation

Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

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“…This is achieved by resist exposure through the semi-transparent polyimide substrate using the opaque bottom gate contact as a mask. The resulting devices can exhibit channel length down to 500 nm and gate overlaps of 1.5 µm without any misalignment (13).…”

Section: Tft Channel Geometriesmentioning

confidence: 99%

Fabrication and AC Performance of Flexible Indium-Gallium-Zinc-Oxide Thin-Film Transistors

2019

Self Cite

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The internet of things or foldable phones call for a variety of flexible sensor conditioning and transceiver circuits. However, the realization of high-performance, large-area, and deformable analog circuits is limited by the materials and the processes compatible with mechanically flexible substrates. Among the different semiconductors, InGaZnO is one of the most promising materials to realize high-frequency flexible thin-film transistors (TFTs) and circuits. In this work, the effect of different geometries, including self-aligned, vertical, and double-gate structures on the AC behaviour of flexible IGZO TFTs is presented. All TFTs are based on Al2O3 insulating layers, InGaZnO semiconductor, and polyimide substrates. The presented TFTs exhibit state-of-the-art performance including a field-effect mobility up to 15 cm 2 /Vs and a mechanical bendability down to radii of 3.5 mm. Due to different trade-offs required in the fabrication, flexible IGZO TFTs with the shortest channel length of 160 nm do not exhibit the highest measured frequency, whereas exceptional maximum oscillation and transit frequencies of 304 MHz and 135 MHz are demonstrated for 500 nm long self-aligned TFTs. Such optimized transistors can be used to realize entirely flexible analog circuits leading towards imperceptible electronic systems.

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“…Still, current densities and the operating frequency of planar OTFTs are behind those of inorganic transistors suitable for flexible substrates (e.g., amorphous gallium‐indium‐tin‐oxide). [ 10 ] One attractive alternative to overcome the limitation of planar OTFTs is vertical organic transistors. These devices offer very short channels compared to their planar counterparts because the thickness of a semiconductor layer can range from a few nanometers to several hundred nanometers.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Static Induction Transistors Based on Small‐Molecule Organic Semiconductors

Guo

Xing

Dollinger

et al. 2020

Adv Materials Technologies

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The polymeric organic‐static‐induction transistor (OSIT), a solid‐state vacuum triode, has been extensively studied as a promising vertical organic thin‐film transistor. By utilizing polymers as organic semiconductors in OSITs, important performance figures have been achieved, for example, a maximum on‐current output of about 10 mA cm−2, on/off current ratio as high as 105, and a large current gain of 1000. However, even though polymers with higher mobility have been developed, the performance of OSITs has not been significantly improved yet. In this work, record‐high performance OSITs with small‐molecule materials as organic semiconductors are demonstrated. Pentacene as a hole‐transport material for p‐type OSITs can be easily deposited into pinholes of the gate electrode, hence creating effective conducting channels. Excellent characteristics, such as a high on‐current greater than 260 mA cm−2, on/off current ratio up to 3.3 × 105, and a large transmission factor of 99.98% as well as high current gain of 7965, are attained. These results make the small‐molecule organic semiconductor a candidate material for vertical OSITs as well as for organic electronics.

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Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Cited by 28 publications

References 20 publications

Research Progress on Flexible Oxide-Based Thin Film Transistors

Research Progress on Flexible Oxide-Based Thin Film Transistors

Fabrication and AC Performance of Flexible Indium-Gallium-Zinc-Oxide Thin-Film Transistors

High‐Performance Static Induction Transistors Based on Small‐Molecule Organic Semiconductors

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