2016
DOI: 10.1002/smll.201600922
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Nanoscale Charge Percolation Analysis in Polymer‐Sorted (7,5) Single‐Walled Carbon Nanotube Networks

Abstract: The current percolation in polymer-sorted semiconducting (7,5) single-walled carbon nanotube (SWNT) networks, processed from solution, is investigated using a combination of electrical field-effect measurements, atomic force microcopy (AFM) and conductive AFM (C-AFM) techniques. From AFM measurements, the nanotube length in the as-processed (7,5) SWNTs network is found to range from ~100 nm to ~1500 nm, with a SWNT surface density well above the percolation threshold and a maximum surface coverage ≈ 58%. Analy… Show more

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Cited by 19 publications
(23 citation statements)
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References 40 publications
(149 reference statements)
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“…Three semiconductor types were investigated, namely the metal oxide semiconductor ZnO, the conjugated polymer F8BT and chirality selected PFO-wrapped semiconducting carbon nanotubes (PFO:CNT). 54 Figure 5a shows a schematic of the device architecture employed consisting of two symmetric Al/Al electrodes and a solution-processed semiconducting layer deposited on top. Figure 5b shows the low-voltage (−8 < V < 8 V) I-V scans for the three types of device.…”
Section: Memristorsmentioning
confidence: 99%
See 1 more Smart Citation
“…Three semiconductor types were investigated, namely the metal oxide semiconductor ZnO, the conjugated polymer F8BT and chirality selected PFO-wrapped semiconducting carbon nanotubes (PFO:CNT). 54 Figure 5a shows a schematic of the device architecture employed consisting of two symmetric Al/Al electrodes and a solution-processed semiconducting layer deposited on top. Figure 5b shows the low-voltage (−8 < V < 8 V) I-V scans for the three types of device.…”
Section: Memristorsmentioning
confidence: 99%
“…The PFO:(5,7)CNT dispersion was prepared following the process described in refs. 54,64 and the respective chlorobenzene solution was spin-coated on the Al/Al nanogap electrodes followed by a mild annealing at 80°C to remove the solvent.…”
Section: Memristor Fabricationmentioning
confidence: 99%
“…Others investigated charge transport on a microscopic scale with, for example, conductive atomic force microscopy (c-AFM), and focused especially on segment and junction resistances. They found values of around 10 k μm −1 for nanotube segments and 10 2 -10 5 k for junctions [29,[35][36][37][38][39][40]. Most of these experiments investigated the role of metallic nanotubes within networks and the highly resistive Schottky barriers between metallic and semiconducting nanotubes.…”
Section: Introductionmentioning
confidence: 99%
“…This pioneering work published by the leading authors has inspired researchers to advance this field. The main focus aims are improving the synthesis methods, enhancing the device performances, lowering the production cost and demonstrating new designs, and some of these studies included the composite materials based on SWCNTs …”
Section: Transistorsmentioning
confidence: 99%