Initial study on copper CMP slurry chemistries

Carpio, Ronald A.; Farkas, J.; Jairath, Rahul

doi:10.1016/0040-6090(95)06649-7

Cited by 139 publications

(88 citation statements)

References 20 publications

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“…Carpio and coworkers [4] studied the use of KMnO 4 in both buffered (pH ¼ 6.88) and unbuffered (pH ¼ 8.76) systems. Potentiodynamic measurements of the unbuffered systems showed low corrosion current for the unabraded copper and a current increase during abrasion.…”

Section: Potassium Permanganate Dichromates and Iodatementioning

confidence: 99%

Key Chemical Components in Metal CMP Slurries

Cheemalapati

Keleher

2007

Microelectronic Applications of Chemical Mechanical Planarization

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Chemical-mechanical planarization (CMP) slurries can be classified into two general categories according to their applications: metal CMP slurry and nonmetal CMP slurry. Two most important metals incorporated into IC chip manufacturing via CMP are W and Cu. Depending upon integration schemes, a metal CMP slurry may or may not carry out the function of removing the film(s) immediately below the overburden metal such as cap, adhesion, and barrier layers. For tungsten CMP, a single-step slurry is typically used to remove both excess tungsten and its barrier/adhesion layer. For copper CMP, after the removal of copper, a subsequent barrier removal step is often required. This chapter reviews the basic requirements for the key components found in common metal slurries.It is generally understood that a metal CMP slurry chemically modifies the surface to be polished and yields a softer and porous complex layer, which is then removed by mechanical force in the process. Although these metals may differ in their physical and chemical properties, the underlying principle for the design of slurries is the same. A production-worthy metal CMP slurry must address several issues, such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), step height reduction efficiency, dishing/erosion, minimum ILD loss, corrosion, scratching, slurry residue, and other surface defects. Typical metal CMP slurry may contain an oxidant, a chelating agent, abrasive particles, a surfactant, and other additives. These components must work in concert to produce adequate material removal rate, high planarization efficiency, and Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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Section: Potassium Permanganate Dichromates and Iodatementioning

confidence: 99%

Key Chemical Components in Metal CMP Slurries

Cheemalapati

Keleher

2007

Microelectronic Applications of Chemical Mechanical Planarization

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“…Investigation of Cu CMP in alkaline slurries containing ammonical compounds [2,[6][7][8][9], glycine-hydrogen peroxide mixture [10,11] and arginine-hydrogen peroxide mixture [12] have been reported in literature. Ammonia can form complexes with copper ions.…”

Section: Introductionmentioning

confidence: 98%

Electrochemical characterization of Cu dissolution and chemical mechanical polishing in ammonium hydroxide–hydrogen peroxide based slurries

Venkatesh

Ramanathan

2009

J Appl Electrochem

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Chemical mechanical polishing (CMP) of copper in ammonium hydroxide based slurry in the presence of hydrogen peroxide was investigated. The polishing trend was found to be similar to that exhibited by other slurries containing hydrogen peroxide and various complexing agents used for Cu CMP. When the hydrogen peroxide concentration is increased, the polish rate increases, reaches a maximum and then decreases. The location and the magnitude of the maximum depend on the ammonium hydroxide concentration. The dissolution of copper in the NH 4 OHhydrogen peroxide solution was probed by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) experiments. Electrical equivalent circuit (EEC) and reaction mechanism analysis (RMA) were employed to determine the mechanistic reaction pathway of Cu dissolution in NH 4 OH-hydrogen peroxide system. Based on the RMA analysis, a four step catalytic mechanism with two adsorbed intermediate species is proposed.

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“…In the CMP process, both mechanical erosion and chemical removal play synergistic roles in achieving the desired planarization, 3 especially in the case of metals. A purely chemical dissolution process is isotropic and does not eliminate topography.…”

Section: Introductionmentioning

confidence: 99%