Chemical-mechanical planarization of Cu and Ta

Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective

“…The planarized structure contains in addition to the metal lines, a barrier layer and interlayer dielectric, which should be planarized simultaneously with the metal layer. Most of these factors have already been discussed thoroughly in number of books, reviews and papers [2][3][4][5][6][7][8][9][10][11]. In the present discussion we consider and discuss the electrochemical aspects of copper CMP.…”

A chemical kinetics model for a mixed-abrasive chemical mechanical polishing

“…However, ceria is more active than alumina to react an oxide film. When these two kinds of abrasives are mixed together, the ceria abrasives adhere on It should be noted that the present model does not control the total concentration of both abrasives in the slurry and according to the data [5] the weight percentages for both abrasives are small. Thus, the present model should have a further assumption that the weight change of any abrasive does not effect the slurry density.…”

“…(29) may become a form like PR=dC 3 WSA0 + eC 2 WSA0 +fC WSA0 +g, where g is a parameter for fitting. According to the data from Babu et al [5], it might show that the polishing rate would reach a constant as the increase of C WSA0 . The polishing rate of ceria abrasives is low, but it increases dramatically by adding alumina abrasives.…”

“…or, for the small abrasive, Table 1 shows the oxide CMP data proposed by Babu et al [5] In Table 1, C LA0 and C SA0 are the premixing concentration of the large and small abrasive respectively.…”

“…Mixed-abrasive slurries were first proposed by Babu et al [5] They filed a patent with a title of bChemicalMechanical PolishingQ to the United State Patent and Trade Mark Office on Sep. 13, 2001 and had its application no. 09/950,612 and publication no.…”