A chemical kinetics model for a mixed-abrasive chemical mechanical polishing

Chen, Ping Hsun; Huang, Bing Wei; Shih, Han C.

doi:10.1016/j.tsf.2004.12.023

Cited by 10 publications

(6 citation statements)

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“…4,19,20 In order to capture the chemical behavior and describe the repetitive removal process of the wafer profile, the surface kinetics model is introduced to relate the overall polish rate to various kinetic processes occurring at the surface modulated by the mechanical parameters. 4,[21][22][23][24][25][26] Slurry chemicals which contain oxidizers, inhibitors and other additives in the slurry determining the reaction kinetics play an important role for the passivation of the wafer surface. [27][28][29][30][31][32][33][34][35][36][37][38] The overall MRR is influenced by the existence of different compositions on the wafer surface, 31,34 resulting in the change of the wafer surface hardness, which affects the aggregate wear rate of the wafer material.…”

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confidence: 99%

A Material Removal Rate Model for Aluminum Gate Chemical Mechanical Planarization

Chen

2015

ECS J. Solid State Sci. Technol.

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In this work, a new aluminum gate chemical mechanical planarization (CMP) model for material removal rate (MRR) is proposed in high-k metal gate (HKMG) process. Using the basic principles of steady-state oxidation reaction and mechanical abrasion mechanism, the combinational interaction of chemical and mechanical coupled effects on MRR was systematically described by process parameters, pad properties and concentration of oxidizer, and then balanced to construct an overall polishing rate. Because of the great significance of the slurry pH on MRR in CMP process, the effects of surface forces, including the influences of van der Waals (vdW) and double-layer (DL) forces simultaneously acted between the wafer and the particles were investigated. Meanwhile, the influence of particle sizes, abrasive loadings and zeta potentials of the wafer and particles on MRR was also analyzed. It is found that the attractive vdW forces strengthen the MRR, while the DL forces, calculated to be repulsive, lower the MRR. The magnitude of surface forces increases with a smaller particle size compared with the pad-particle force. When zeta potentials of the wafer and particles are considered as a function of slurry pH, the experimental trends for the MRR with slurry pH, applied pressure and abrasive loading were predicted well by the present model. Therefore, the governing equation of aluminum removal reveals some insights into the HKMG CMP process and can be utilized for optimizing and controlling the polishing rate of aluminum gate structures and performing sensitivity analyses of operating parameters. With the steady shrinkage of the feature size and device geometry of modern integrated circuits (ICs), chemical mechanical planarization (CMP) has become the most important process choice for the surface planarization in the fabrication of advanced multilever ICs in microelectronic industry.1 A variety of materials and structures, including copper damascene metallization, oxides in shallow trench isolation (STI) and inter-level dielectrics (ILD), replacement metal gate for high-k metal gate (HKMG) structures and fin field effect transistor (FinFET) devices are polished with different slurries. [2][3][4] In CMP process, a rotating wafer with different types of design structures is pushed against a rotating polishing pad which is immersed in slurries containing chemicals and abrasive particles. Pattern structures on the wafer surface are first chemically passivated by slurry chemicals and then removed by effects of contact interactions of abrasive particles which are trapped between the pad and the wafer. The contact mechanism of the particles in the slurry provides the opportunity to remove the material from the wafer surface at an acceptable production rate. 5The material removal rate (MRR) which has been studied extensively from both a modeling and experimental standpoint depends sensitively on pattern geometry, process parameters, chemical reactions, pad properties and mechanical abrasion. If the CMP process is not properly controlled...

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A Material Removal Rate Model for Aluminum Gate Chemical Mechanical Planarization

Chen

2015

ECS J. Solid State Sci. Technol.

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“…The role of diffusional resistances was studied (Chen and Shih, 2006;Huang et al, 2006;Kao and Li, 2006;Su et al, 2006).…”

Section: Introductionmentioning

confidence: 99%

Mass transfer from a coated pure drug bead

Lee

2008

Journal of the Chinese Institute of Chemical Engineers

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“…Kanjickl and Lopina (2004) reviewed some diffusion-controlled models for drug delivery systems. The significant role of diffusional resistances was studied in numerous systems (Chen and Shih, 2006;Huang et al, 2006;Kao and Li, 2006;Kuo and Chung, 2005;Santana and MaciasMachin, 2006;Su et al, 2006).…”

Section: Introductionmentioning

confidence: 99%