Influence of the growth conditions on the stoichiometry and on the optical properties of titanium oxide thin films prepared by reactive sputtering

Optical and transport properties of Ti‐doped In2O3 thin films prepared by electron beam physical vapour deposition

“…In the case of TiO 2 , the fundamental absorption has an indirect transition ( n = 2) and the corresponding plot [Fig. 4(a)] allows a band‐gap energy of 3.05 eV which is in agreement with reported values for TiO 2 films prepared by sputtering 15, 16. Absorption data corresponding to other samples are given also in this plot, where band‐gap energies can be seen.…”

Optical properties of nanometric TiO2 clusters deposited on thin films by high pressure sputtering

“…The band-gap energies of "as-grown" samples [inset of Fig. 5] show values of 3.45 and 3.47 eV (which are close to the reported value of 3.36 eV for amorphous bulk TiO2 [17]), in agreement with the amorphous character determined by Raman spectroscopy and with the expected lack of stoichiometry that slightly shifts the gap to higher values [18]. However, after the heating treatment at 600 and 800°C, the obtained band-gap energy becomes smaller in agreement with the gap corresponding to bulk TiO 2 anatase (3.2 eV) [17] and far from typical values of bulk rutile phase (3.0 eV) [9].…”

Characterization on RF magnetron sputtered niobium pentoxide thin films

“…In the case of thin films deposited by sputtering method, the crystallinity of deposited film depends on the nature of substrate, substrate temperature and energy of ions impinged on the substrate surface. In the present study, the amorphous nature of substrate and the relatively low substrate temperature and kinetic energy of impinged ions favour the amorphous nature of the samples [12]. Maruyama et al [11] have reported that the Nb2O5 films deposited at 300 W rf power are amorphous in nature.…”