Iron oxide nanoclusters have been prepared by the gas-phase aggregation technique to form thin film structures with very high exchange bias values (up to 3000 Oe at low temperatures). Composition has been analysed by x-ray absorption and Mössbauer spectroscopies in order to elucidate the actual origin of the observed magnetic behaviour. The formation of a metal-oxide core-shell arrangement to explain the observed exchange bias has to be discarded since results show no metallic iron content and the main presence of α-Fe 2 O 3 . The observed weak ferromagnetism and exchange bias are in agreement with the obtained size of α-Fe 2 O 3 nanoparticles: weak ferromagnetism because of the well-known spin canting in this antiferromagnetic structure and exchange bias because of the interaction between different spin sublattice configurations promoted by the modification of iron coordination in α-Fe 2 O 3 nanoparticles. Moreover, the preparation method is proposed for tuning both magnetization and exchange bias values by modification of the preparation conditions of α-Fe 2 O 3 nanoparticles, which open new possibilities in the design of new materials with required properties.
Ti-doped In 2 O 3 (ITiO) thin films have been prepared by electron beam physical vapour deposition (EB-PVD). Their optical and electrical properties are studied for the obtained compositions. After oxygen annealing all samples show excellent optical transparence; additionally, maximum values for conductivity are obtained for samples with titanium contents near 6 at.%, with typical resistivity values of 4 Â 10 À5 V cm. Finally, the band-gap energy evolution is studied for the set of samples.
Transparent and conductive indium titanium oxide (ITiO) films have been obtained by electron beam physical vapour deposition with Ti content from 5 at % up to 28 at %. X-ray absorption spectroscopy techniques have been used to identify the local environment of Ti ions. Even at the lowest concentrations Ti is not incorporated into the In 2 O 3 structure but forms clusters of a Ti−In mixed oxide that present a distorted rutile TiO 2 short-range order. The optical transmittance of the annealed samples reaches 95 % and no significant variation of the gap energy (around 3.7 eV) is observed with Ti content. The electronic conductivity under light irradiation is studied evidencing a huge photo-resistance in the samples with Ti content above 22 at % reaching more than two orders of magnitude for the 26 at % Ti under illumination with few μW/cm 2 at 365 nm. Hall and conductivity results are analyzed using a model that takes into account both electron and hole carriers as well as the conductivity enhancement by carrier photogeneration. The electron carrier density decreases with Ti content while its mobility increases up to values of 1000 cm 2 /(V s). Oxygen annealed ITiO films obtained by this technique with Ti content below 10 at % have properties adequate as transparent semiconductors and those with Ti content higher than 22 at % have exceptional photoresistive properties relevant for numerous applications.
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