Optical and transport properties of Ti‐doped In<sub>2</sub>O<sub>3</sub> thin films prepared by electron beam physical vapour deposition

Sánchez-Marcos, J.; Ochando, I.M.; Galindo, R. Escobar; Martínez-Morillas, R.; Prieto, C.

doi:10.1002/pssa.200983717

Cited by 5 publications

(4 citation statements)

References 18 publications

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“…Highly dispersed Ti was observed in the elemental mapping analysis (Figure S2b–d). In the UV‐Vis analysis, the absorption peak position for Ti−In 2 O 3 was shifted towards lower wavenumber as compared to undoped In 2 O 3 due to the doping of Ti in In 2 O 3 (Figure S3) [31] . These results show that mixed oxide of In−TiO 2 and Ti−In 2 O 3 were formed and the dopant was dispersed in the parent oxide without formation of agglomerated particles.…”

Section: Resultsmentioning

confidence: 85%

Redox Behavior of In−O−Ti Interface for Selective Hydrogenation of CO₂ to CO in Doped In−TiO₂ Catalyst

2023

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In the CO 2 hydrogenation reaction, selective synthesis of CO at low temperature and high pressure is needed to integrate the reverse water gas shift reaction with Fischer-Tropsch synthesis.Here, we show that a mixed oxide catalyst prepared by doping indium (In) into TiO 2 produces CO with the formation rate of 22 μmol g À 1 s À 1 . The CO selectivity was more than 99 % at 350 °C and 3 MPa pressure. Moreover, the catalyst was durable for over 100 h on stream. During reaction the interfacial In 3 + À OÀ Ti 4 + sites were first reduced in presence of H 2 and then oxidized back with CO 2 producing CO. Because of the redox mechanism, the formation of methanol and methane was limited. This study shows the development of a promoter-free oxide catalyst for CO 2 hydrogenation and the importance of the redox property at the oxide interface for selective hydrogenation of CO 2 to CO under unfavorable conditions.

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Section: Resultsmentioning

confidence: 85%

Redox Behavior of In−O−Ti Interface for Selective Hydrogenation of CO₂ to CO in Doped In−TiO₂ Catalyst

2023

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“…The Ti-content in the films prepared by this EB-PVD preparation technique are considerably lower compared to the values in the starting pellet . Therefore, the starting pellets were made with very high Ti-content (up to nearly 95 at %) and, consequently, the evaluation of the Ti content of each studied film was necessary.…”

Section: Resultsmentioning

confidence: 99%

“…Indium molybdenum, indium tungsten, and indium titanium oxides (IMO, IWO, and ITiO, respectively) thin films present transparent conductive properties with low electrical resistivity and high mobility. , Specifically, ITiO has been recently reported to have an excellent electronic mobility for Ti content below 5 at % . This system has been prepared by different methods: pulsed laser deposition, magnetic null discharge sputter source or by sputtering from ceramic targets and recently by electron beam physical vapor deposition (EB-PVD). In all of them, conductive samples are obtained for Ti contents lower than 20 at %.…”

Section: Introductionmentioning

confidence: 99%

Huge Photoresistance in Transparent and Conductive Indium Titanium Oxide Films Prepared by Electron Beam–Physical Vapor Deposition

Martínez-Morillas

Ramı́rez

Sánchez-Marcos

et al. 2014

ACS Appl. Mater. Interfaces

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Transparent and conductive indium titanium oxide (ITiO) films have been obtained by electron beam physical vapour deposition with Ti content from 5 at % up to 28 at %. X-ray absorption spectroscopy techniques have been used to identify the local environment of Ti ions. Even at the lowest concentrations Ti is not incorporated into the In 2 O 3 structure but forms clusters of a Ti−In mixed oxide that present a distorted rutile TiO 2 short-range order. The optical transmittance of the annealed samples reaches 95 % and no significant variation of the gap energy (around 3.7 eV) is observed with Ti content. The electronic conductivity under light irradiation is studied evidencing a huge photo-resistance in the samples with Ti content above 22 at % reaching more than two orders of magnitude for the 26 at % Ti under illumination with few μW/cm 2 at 365 nm. Hall and conductivity results are analyzed using a model that takes into account both electron and hole carriers as well as the conductivity enhancement by carrier photogeneration. The electron carrier density decreases with Ti content while its mobility increases up to values of 1000 cm 2 /(V s). Oxygen annealed ITiO films obtained by this technique with Ti content below 10 at % have properties adequate as transparent semiconductors and those with Ti content higher than 22 at % have exceptional photoresistive properties relevant for numerous applications.

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“…10 It has been reported that thin films with very high mobility (80-130 cm 2 V À1 s À1 ) can be obtained by either thermal reactive evaporation or pulsed laser deposition, 11,12 and films with low resistivity (4 Â 10 À5 X-cm) by can be obtained by electron beam physical vapor deposition. 13 On thecontrary, Ga, Aldoped zinc oxide (GAZO) has been regarded as one of the most competitive TCOs due to the advantages of its abundance in nature, nontoxicity, stability in hydrogen plasma, high transmittance in the visible range, and lower resistivity. It has been studied as an alternative material for transparent conductive ITO thin films.…”

Section: Introductionmentioning

confidence: 99%

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium–tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

Wang

Wuu

Lin

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was postannealed at 350 C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T diffuse /T total) of the GAZO/ITIO bi-layer films increases upon increasing the postannealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bilayer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 Â 10 À3 X cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells. V

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Optical and transport properties of Ti‐doped In₂O₃ thin films prepared by electron beam physical vapour deposition

Cited by 5 publications

References 18 publications

Redox Behavior of In−O−Ti Interface for Selective Hydrogenation of CO₂ to CO in Doped In−TiO₂ Catalyst

Redox Behavior of In−O−Ti Interface for Selective Hydrogenation of CO₂ to CO in Doped In−TiO₂ Catalyst

Huge Photoresistance in Transparent and Conductive Indium Titanium Oxide Films Prepared by Electron Beam–Physical Vapor Deposition

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium–tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

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Optical and transport properties of Ti‐doped In2O3 thin films prepared by electron beam physical vapour deposition

Cited by 5 publications

References 18 publications

Redox Behavior of In−O−Ti Interface for Selective Hydrogenation of CO2 to CO in Doped In−TiO2 Catalyst

Redox Behavior of In−O−Ti Interface for Selective Hydrogenation of CO2 to CO in Doped In−TiO2 Catalyst

Huge Photoresistance in Transparent and Conductive Indium Titanium Oxide Films Prepared by Electron Beam–Physical Vapor Deposition

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium–tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

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Optical and transport properties of Ti‐doped In₂O₃ thin films prepared by electron beam physical vapour deposition

Redox Behavior of In−O−Ti Interface for Selective Hydrogenation of CO₂ to CO in Doped In−TiO₂ Catalyst

Redox Behavior of In−O−Ti Interface for Selective Hydrogenation of CO₂ to CO in Doped In−TiO₂ Catalyst