Influence of SiN buffer layer in GaN epilayers

Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD

“…Epitaxial lateral overgrowth (ELO) has been proven to be an effective method to reduce dislocations [4,5] . It has also been discovered that depositing an in-situ SiN x mask with partial coverage of the surface can drastically reduce the dislocation density by termination and bending of threading dislocations [6][7][8] . However, the growth time of the mask layer must be optimized or incomplete GaN coalescence will occur, resulting in pits on the epilayer and beating the purpose of introducing SiN x for dislocation reduction.…”

Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers

“…However, such a procedure is relatively complex that inevitably results in a low production yield. Recently, it has been reported that one can reduce the defect density in nitride-based epitaxial layers using GaN-SiN as the nucleation layer [8][9][10][11][12][13][14][15]. Many nanometer-sized porous SiN layer probably serves to enhance the lateral growth, which is quite similar to that in ELO to reduce dislocation density.…”

Epitaxial growth of high-quality GaN on appropriately nitridated Si substrate by metal organic chemical vapor deposition

“…5. Otherwise, SiN x grown on the sapphire substrate at 500-650 1C by diluted SiH 4 gas exposure was reported to be a porous structure with many nanometer-sized holes in it [15]. Two possible bases are therefore plausible to be responsible for the effects of SiN x buffer for the crystallinity and quality improvement of the GaN top layer.…”

“…Otherwise, GaN cannot be grown as a buffer layer directly on Si substrates due to poor nucleation of GaN on Si [12]. Therefore many other kinds of buffers have previously been used, such as AlN [13], AlGaN/ AlN [14,15] and SiC [16]. Although there have been some reports on the successful growth of GaN on Si, a defect-induced broad yellow luminescence (YL) band was not easy to be removed from the photoluminescence (PL) spectra [9,15,17].…”

“…Therefore many other kinds of buffers have previously been used, such as AlN [13], AlGaN/ AlN [14,15] and SiC [16]. Although there have been some reports on the successful growth of GaN on Si, a defect-induced broad yellow luminescence (YL) band was not easy to be removed from the photoluminescence (PL) spectra [9,15,17]. On the other hand, it has recently been demonstrated that no YL was present when a Si 3 N 4 buffer was used for the GaN grown by hot wall chemical vapor deposition [18].…”