Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD

Yu, Naisen; Wang, Yong; Wang, Hui; Ng, KaiWei; Lau, Kei May

doi:10.1007/s11431-009-0255-5

Cited by 7 publications

(8 citation statements)

References 10 publications

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“…Introducing SiN as a masking layer just before growing HT‐GaN thick film leads to decrease in the reflectance intensity. The decrease is attributed to a rough surface and aforementioned initial 3D growth mode of GaN from nucleus islands leading to subsequent lateral overgrowth of GaN until full coalescence is achieved, which was also observed by several research groups and author himself . It was found that variation in V/III ratio during final GaN layer growth strongly influences heterostructure morphology, its roughness and degree of characteristic micropits creation .…”

Section: Resultssupporting

confidence: 54%

Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures

Szymański

Wośko

Paszkiewicz

et al. 2015

Crystal Research and Technology

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AlGaN/GaN heterostructures were deposited on Si utilizing in-situ SiN masking layer as a mean to decrease stress present in the final heterostructures. Structures were grown under different V/III ratio using metalorganic vapour phase epitaxy (MOVPE). Additional approach was applied to obtain crack-free heterostructures which was deposition of 15 nm low temperature AlN interlayer. Each of the heterostructure contained GaN layer of 2.4 μm total thickness. In-situ SiN masking layer were obtained via introduction of SiH4 precursor into reactor under high temperature growth conditions for 100 s. In that manner, few monolayers of SixNx masking layer were deposited, which due to the partial coverage of AlN, played role of a mask leading to initial 3D growth mode enhancing longer coalescence of GaN buffer layer. To study surface morphology AFM images were observed. Three methods were used in order to obtain basal plane stress present in multilayer structures -MicroRaman spectroscopy, XRD studies and optical profilometry. It was found that varying V/III precursors ratio during GaN layer growth characteristic for structures with the SiN mask approach formation of triangular micropits can be minimized. Outcomes for three different methods turned out to be coherent. It was found that certain amount of micropits on the surface can be advantageous lowering stress introduced during cooling after process to the AlGaN/GaN/SiN/AlN/Si(111) structure.

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Section: Resultssupporting

confidence: 54%

Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures

Szymański

Wośko

Paszkiewicz

et al. 2015

Crystal Research and Technology

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“…Prior to the growth, the substrates were heated up to 1190 • C for 10 minutes in an H 2 atmosphere to remove the native oxide. Then, a 40 nm-thick AlN nucleation layer was deposited at 1150 • C, followed by a SiN x mask layer growth at 1160 • C [12] . This SiN x mask did not cover the AlN surface completely.…”

Section: Methodsmentioning

confidence: 99%

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

Li¹,

Wang²,

Wong³

et al. 2014

Chinese Phys. B

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High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-µm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-µm gate length T-shaped gate HEMTs were also investigated.

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“…An HT-AlN (HT for "High-Temperature") nucleation layer was grown on the Si substrate at the same temperature, followed by the deposition of a SiN x in situ mask for 110 seconds. 1 µm undoped-GaN buffer layer was then grown using an ammonia flow modulation method [10]. An 8-pair superlattice consisted of 6 nm HT-AlN/25nm HT-AlGaN was inserted to reduce the tensile stress.…”

Section: Methodsmentioning

confidence: 99%

Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper

Lau¹,

Wong²,

Zou³

et al. 2011

Opt. Express

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LEDs on Si offer excellent potential of low cost manufacturing for solid state lighting and display, taking advantage of the well-developed IC technologies of silicon. In this paper, we report how the performance of LEDs grown on Si can be improved. Multiple quantum well InGaN LED structure was grown on patterned silicon substrates and circular LEDs 160 µm in radius were processed. Fabricated LEDs were then transferred to an electroplated copper substrate with a reflective mirror inserted by a double-flip transfer process, to improve the light extraction efficiency and heat dissipation. The light output power of LEDs on copper increased by ~80% after the transfer. The operating current before the onset of light output power saturation also increased by 25% because of the good thermal conductivity of copper. The light output power of packaged LEDs on copper was 6.5 mW under 20 mA current injection and as high as 14 mW driven at 55 mA.

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Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD

Cited by 7 publications

References 10 publications

Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures

Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper

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