Epitaxial growth of high-quality GaN on appropriately nitridated Si substrate by metal organic chemical vapor deposition

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

“…Due to a large lattice mismatch, a high density of threading dislocations on the order of (10 9 -10 10 cm −2 ) exists in the GaN film on silicon substrates, which significantly affects the performance of the GaN based devices [8]. In order to obtain crack-free highquality GaN film on Si substrate, various types of buffer layers and growth conditions as well as post-growth heat treatment processes have been proposed by different research groups [10][11][12][13][14][15][16][17]. However, the appearance of the cracks is quite random on the film, which produces significant difficulty in device applications.…”

“…It has been recently demonstrated that defect-free GaN on Si could be realized when a Si x N y buffer was used in hot wall chemical vapor deposition [14] with MOCVD [15] growth techniques. These buffer layers were achieved by nitridating the Si substrate with N 2 flow at 900°C by Huang et al [14] and at 1120°C by Wu-Yih Uena et al [15].…”

“…These buffer layers were achieved by nitridating the Si substrate with N 2 flow at 900°C by Huang et al [14] and at 1120°C by Wu-Yih Uena et al [15]. With a similar approach, a double-buffer structure of AlN/Si x N y was used to obtain high quality GaN film on Si substrate by using molecular beam epitaxy (MBE) [16].…”

Temperature-dependent photoluminescence of GaN grown on β-Si3N4/Si (111) by plasma-assisted MBE

“…A number of studies are being performed successfully to grow GaN on different substrates such as Al 2 O 3 , SiC, GaAs and Si [2,3]. Silicon is considered as one of the most promising substrates for the GaN epitaxy because of its many advantages such as high quality, large size, low cost and a well-known existing device technology [4].…”

“…The difference in the lattice constant and the thermal-expansion coefficients of GaN and Si, the deformation fields and corresponding generation of high-density dislocations at the interface of GaN layers grown on Si (1 1 1) is much higher than that of the homoepitaxially grown films. To overcome these difficulties, the fast works are attempted to grow GaN films by introducing several intermediate layers on Si substrates such as AlN [5,6], GaN [7] and SiC [8], and a defect-induced broad emission, yellow luminescence (YL), was commonly present [9]. By introducing silicon nitride buffer layer, the YL can be suppressed [10] and also it is a very effective material for diffusion barrier; so it could reduce the Si diffusion in the GaN epilayers from substrate [11].…”