The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

Arslan, Engin; Öztürk, Mustafa Kemal; Duygulu, Özgür; Kaya, Ali Arslan; Özçelik, Süleyman; Özbay, Ekmel

doi:10.1007/s00339-008-4939-7

Cited by 28 publications

(33 citation statements)

References 42 publications

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“…In the case of the interface was truly between the AlN layer and Si substrate, the crystallographic relationship and relatively high dislocation density, originating from the interface due to the large lattice mismatch between the two crystals, would provide a satisfactory explanation. However, in the present study and others, the AlN/Si interface contains an amorphous SiN x layer [20][21][22]33].…”

Section: Resultscontrasting

confidence: 54%

The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with interlayers

Arslan

Duygulu

Kaya

et al. 2009

Superlattices and Microstructures

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a b s t r a c tThe effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin buffer layer of silicon nitride (SiN x ) with various thicknesses was achieved through the nitridation of the substrate at different nitridation times ranging from 0 to 660 s. The surface roughness of the GaN film, which was grown on the Si substrate 10 s, exhibited a root mean square (RMS) value of 1.12 nm for the surface roughness. However, further increments in the nitridation times in turn cause increments in the surface roughness in the GaN layers. The number of threading dislocation (TD) was counted from plan-view TEM (Transmission Electron Microscopy) images. The determined density of these threading dislocations was of the order of 9 × 10 9 cm −2 . The sheet resistances of the GaN layers were measured. The average sheet resistance significantly increases from 2867 sq E. Arslan et al. / Superlattices and Microstructures 46 (2009) 846-857 847 at various nitridation times were done at a temperature range of 10-300 K. A strong band edge PL emission line, which was centered at approx. 3.453 eV along with its phonon replicas which was separated by approx. 92 meV in successive orders, was observed at 10 K. The full width at half maximum (FWHM) of this peak is approx. 14 meV, which indicates the reasonable optical quality of the GaN epilayers grown on Si substrate. At room temperature, the peak position and FWHM of this emission became 3.396 eV and 58 meV, respectively.

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Section: Resultscontrasting

confidence: 54%

The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with interlayers

Arslan

Duygulu

Kaya

et al. 2009

Superlattices and Microstructures

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“…This plot is a linear plot that we use FWHM as a function of reflection degrees gained from rocking curves. This plot is formed by plotting FWHM × sin(θ)/λ function versus sin(θ)/λ [17,18].…”

Section: Williamson-hall (W-h)mentioning

confidence: 99%

Investigation of structural, optical and morphological properties of InGaN/GaN structure

et al. 2018

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In this study, InGaN/GaN structure is investigated in the temperature range of 300-500 °C with steps of 50 °C. InGaN/ GaN multi-quantum well structure is deposited on c-orientated sapphire wafer by metal organic chemical vapour deposition method. All the parameters except for temperature kept constant during growth period. InGaN/GaN structures with different In content are investigated by XRD technique. Their structural, optical and morphological characteristics are determined by high resolution X-ray diffraction, Fourier transform spectroscopy (FTIR), photo luminescence (PL), transmission and atomic force microscopy (AFM). According to FTIR and PL spectra's, it is noticed that band gap values coincide with blue region in the electromagnetic spectrum. As a result of transmission measurements it is seen that light is completely absorbed by the sample at approximately 390 nm. Using XRD technique, dislocation densities and strain are calculated. Full width at half maximum of the XRD peak values gained from X-ray diffraction are used in an alternative method called Williamson-Hall (W-H). Using W-H method, lateral and vertical crystal lengths and tilt angles are determined. Surface roughness parameters are investigated by AFM. Different properties of GaN and InGaN layers are compared as dependent on increasing temperature. According to AFM images it is seen that these structures have high surface roughness and large crystal size. All the results yielded from the mentioned methods are in good agreement with the previous works done by different authors.

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“…Because of its low cost, large diameter wafer availability with high quality and good thermal and electrical conductivities, Si is regarded as a relatively promising substrate for GaN epitaxy among these materials. However, the large lattice mismatch and the difference in thermal expansion coefficients between GaN layers and Si substrate lead to the formation of cracks when the thickness of the grown layer exceeds a critical value [5,7,[9][10][11]. The high quality GaN epilayers cannot be grown on these substrates directly.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, several strain compensating layer structures have been offered as buffer layer schemes, such as step-graded AlGaN, AlN, and AlN/GaN or AlGaN/GaN based superlattices and thin silicon nitride (SiN x ) interlayers in order to overcome the problems. The strain compensating buffer layer parameters, such as compound, thickness, and growth temperature, need to be optimized [5,7,[9][10][11][12]. Wu-Yih Uen et al [13] investigated the effect of in situ substrate nitridation on the GaN crystalline quality and the nitridation process performed at 750, 950, and 1120 1C, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…Because of the limited availability of inexpensive homoepitaxial substrates, the GaN films are usually grown heteroepitaxially on sapphire (a-Al 2 O 3 ), SiC, and Si substrates. However, it is difficult to grow high-quality GaN on sapphire, SiC, and Si substrates due to a large lattice mismatch and a thermal expansion coefficient incompatibility and results in a high level of in-plane stress and defects (dislocations, stacking faults, twins, grain boundaries, micropipes, point defects) generation in the GaN epitaxial layer [4][5][6][7][8]. Because of its low cost, large diameter wafer availability with high quality and good thermal and electrical conductivities, Si is regarded as a relatively promising substrate for GaN epitaxy among these materials.…”

Section: Introductionmentioning

confidence: 99%

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Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

Öztürk

Arslan

Kars

et al. 2013

Materials Science in Semiconductor Processing

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a b s t r a c tThe strain analysis of GaN film on nitridated Si(111) substrate with different growth times between 0 and 660 s via metal organic chemical vapor deposition (MOCVD) was conducted based on the precise measurement of the lattice parameters by using highresolution X-ray diffraction (HR-XRD). The nitridation time (NT) was changed at a fixed growth condition. The a-and c-lattice parameters were measured, followed by the in-plane and out-of-plane strains. Then, the biaxial and hydrostatic components were extracted from the total strain values obtained, and were then discussed in the present study as functions of the NT. The biaxial strain and stress are also strongly affected by the non-uniformity of the SiN x buffer layer thickness.Published by Elsevier Ltd.

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The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

Cited by 28 publications

References 42 publications

The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with interlayers

The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with interlayers

Investigation of structural, optical and morphological properties of InGaN/GaN structure

Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

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