Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Abstract

In this work, the Total Ionizing Dose (TID) response of a commercial 28 nm high-k CMOS technology at ultra-high doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width, but also on the channel length. Short channel pMOSFETs exhibit a higher TID tolerance compared to long ones. We attributed this effect to the presence of the halo implantations. For short channel lengths, the drain halo can overlap the source one, increasing the average bulk doping along the channel. The higher bulk doping attenuates the radiation-induced degradation, improving the TID tolerance of short-channel transistors. The results are finally compared and discussed through Technology Computer-Aided Design simulations.

Total ionizing dose effects on ring-oscillators and SRAMs in a commercial 28 nm CMOS technology

“…Recent studies have shown that commercial-grade bulk 28 nm CMOS technology can withstand extremely high levels of total ionizing dose (TID) [1][2][3][4]. These results prompted CERN to target the 28 nm CMOS process as a possible common technology for the most advanced developments for High Energy Physics application.…”

Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET

“…The devices with different sizes follow the same power law trends, but device with narrow channel and short channel show more significant threshold voltage shift under the same stress condition. It is interesting to note that the total ionizing dose effect of pMOSFET shows the same channel width dependence, which can be explained by the STI-related effect [38]. To verify these phenomena, TCAD simulations are conducted in this paper.…”

Ionizing radiation influence on 28-nm MOS transistor's low-frequency noise characteristics

“…With further decrease in transistor dimensions, Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects were demonstrated [9], revealing a decrease in TID tolerance. Lastly, the sub-100 nm transistors show a reversal of the RISCE effect, with the leading explanation indicating that the halo implantation overlap increases the overall doping in the channel region and, with that, reduces the influence of the trapped oxide charge in the spacer region [10]. For these reasons, together with the speed and power consumption improvements, the 28-nm CMOS technology has been identified as a strategic one for the application in future high-energy physics instrumentation [11].…”