1.8-MeV proton irradiation to a fluence of 1014/cm2 does not significantly affect the resistance or low-frequency noise of copper or ruthenium resistors fabricated via modern microelectronic fabrication techniques used to form metal lines. The room-temperature noise of these Cu and Ru resistors is surprisingly similar to that of Cu and Pt metal lines and wires fabricated using late-1970s nanofabrication techniques; however, measurements of the temperature dependence of the noise show that the defect kinetics are quite different among the various materials. A large increase in the noise magnitude observed above 200 K in Cu but not in Ru is consistent with the superior resistance to electromigration that Ru lines have shown, relative to Cu.
Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate stable RTN in planar bulk-Si metal-oxide-semiconductor (MOS) transistors and in Si fin field-effect transistors (FinFETs). In these cases, pre-existing defects in the ultrathin gate dielectrics dominate the device low-frequency 1/f noise (LFN). In contrast, III–V MOS devices with lower quality oxide/semiconductor interfaces show significant increases in LFN at much lower doses, due to the TID-induced activation of high densities of border traps. Aggressively scaled devices fabricated in Si gate-all-around nano-wire FET technology exhibit prominent defects leading to LFN and RTN. Increases or decreases of LFN in these devices during irradiation and annealing results primarily from the activation or passivation of border traps and interface traps.
In this work, the Total Ionizing Dose (TID) response of a commercial 28 nm high-k CMOS technology at ultra-high doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width, but also on the channel length. Short channel pMOSFETs exhibit a higher TID tolerance compared to long ones. We attributed this effect to the presence of the halo implantations. For short channel lengths, the drain halo can overlap the source one, increasing the average bulk doping along the channel. The higher bulk doping attenuates the radiation-induced degradation, improving the TID tolerance of short-channel transistors. The results are finally compared and discussed through Technology Computer-Aided Design simulations.
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