Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

Borghello, Giulio; Faccio, F.; Lerario, Edoardo; Michelis, S.; Kulis, Szymon; Fleetwood, D.M.; Schrimpf, R.D.; Gerardin, Simone; Paccagnella, A.; Bonaldo, Stefano

doi:10.1109/tns.2018.2828142

Cited by 30 publications

(13 citation statements)

References 26 publications

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“…transistors in the digital gates as explained in [1]. A small increase of the frequency is observed at the beginning of the irradiation campaign, induced by an increase of the current that the transistors drive, which is compensated by a following effect that reduces this current and that becomes dominant during the rest of the campaign.…”

Section: Pos(vertex2019)066mentioning

confidence: 99%

“…an equivalent dose to 10 years of the HL-LHC is collected in a few days. However, recent results [1] show that the radiation damage of 65nm CMOS devices depends on the dose rate, they degrade faster at the lower dose rate (LDR) than at the HDR. This phenomenon, called Enhanced Low Dose-Rate Sensitivity (ELDRS), should be investigated and, ideally, quantified for qualification of RD53A readout chips [2] that will be used in the low irradiation dose rate environment, like at HL-LHC.…”

Section: Introductionmentioning

confidence: 99%

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Low dose rate 60Co facility in Zagreb

Roguljić¹,

Starodumov²,

Karadzhinova-Ferrer³

et al. 2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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The Co-60 irradiation facility at Ruđer Bošković Institute in Zagreb allows for gamma irradiation in a large range of doses from a maximum of 30kGy/h down to 30Gy/h. Recently, a setup for the radiation tolerance study of readout electronics has been built inside the irradiation chamber. This setup allows for performing tests in conditions similar to ones that will be experienced at HL-LHC experiments. The irradiation dose rate is close to the dose rate at 3cm from the p-p interaction point, the temperature inside cold boxes is controlled by using chilled water and Peltier elements, and the relative humidity is defined by dry air flushed through the cold boxes.The setup is used for irradiation of ATLAS and CMS pixel detector prototype readout chips, called RD53A. This chip is built in 65 nm CMOS technology that demonstrates a radiation damage dependence on the irradiation dose rate. In this paper the setup itself and a few preliminary results of the radiation damage received at the low dose rate will be presented.

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Section: Pos(vertex2019)066mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low dose rate 60Co facility in Zagreb

Roguljić¹,

Starodumov²,

Karadzhinova-Ferrer³

et al. 2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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show abstract

“…Typical ∆V/V values for the conventional technologies are in the range 0.005-0.99 [6][7][8][9][10][11][12][13][14] , which are substantially larger than those observed for the quasi-2D 1T-TaS2 CDW devices. Even for devices showing high radiation tolerance, complex and expensive testing protocols are required for device qualification, which is not the case for these CDW devices 10,16,36,37 .…”

Section: Table I: Proton Bombardment Effects On Quasi-2d Devicesmentioning

confidence: 99%

Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

et al. 2019

Self Cite

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Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities [1][2][3][4] . Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction [5][6][7][8][9][10] . Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic protons 8,10 . Modern electronics based on semiconductors -even those specially designed for radiation hardness -remain highly susceptible to proton damage. Here we demonstrate that room temperature (RT) charge-density-wave (CDW) devices with quasi-two-dimensional (2D) 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 10 14 H + cm -2 . Current-2 | P a g e voltage I-V characteristics of these 2D CDW devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other 2D devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these "all-metallic" CDW devices can be attributed to their two-terminal design, quasi-2D nature of the active channel, and high concentration of charge carriers in the utilized CDW phases. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments. | P a g eThe future of human and unmanned space exploration depends crucially on the development of new electronic technologies that are immune to space radiation, which consists primarily of protons, electrons, and cosmic rays 1-4 . The penetrating energetic radiation of deep space produces negative impacts on not only biological entities but also the electronic systems of space vehicles. Electronics capable of operating in highradiation environments are also needed for monitoring nuclear materials, medical diagnostics, radiation treatments, nuclear reactors and particle accelerators 5-12 .Shielding of electronic systems in space is limited to lower-energy electrons and protons.High-energy proton irradiation causes ionizing damage by generating excess charges at the interface regions in the complementary metal-oxide-semiconductor (CMOS) transistors and other typical microelectronic devices and integrated circuits [8][9][10][11][12][13][14] . This type of damage results in the changes in the threshold voltages and source-drain currents, potentially leading to device or system failure. Protons also can induce displacement, which typically leads to the formation of point defects in semiconductors. These are electronic trapping states that often reveal themselves by increases in low-frequency noise (LFN) 15,16 Noise increases beyond system tolerance limits is therefore an additional challenge to electronics in high-radiation environments. Shielding, the use of conventional radiation-hardened technologies and backup devices, increases system...

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“…Therefore, the specific modifications for synchronizers and their corresponding transmission protocols in TMR applications are required. At present, majority of researches focus on antiirradiation design [11,12,13,14,15,16,17], irradiation test [18,19,20,21,22], CDC design [7,23,24], metastable parameter test [25,26,27]. However, they have not addressed the problem combining both effects of SEUs and metastability.…”

Section: Introductionmentioning

confidence: 99%

Design and verification for CDC synchronization based on TMR

Fan

Deng

2020

IEICE Electron. Express

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Triple modular redundancy (TMR) is widely used in FPGA/ASIC circuits to protect circuits against single event upsets (SEUs). However, because of the interference of metastability on signal transmission across clock domains, the TMR circuits' capability against SEUs is reduced greatly. In order to solve this problem, a cross-clock transmission solution which could be applied in TMR circuits are presented. In addition, simulationbased verification which combined protocol assertions, metastable injection and forced inversion is proposed to succeed in verifying the availability of the solution based on TMR circuits.

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Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

Cited by 30 publications

References 26 publications

Low dose rate 60Co facility in Zagreb

Low dose rate 60Co facility in Zagreb

Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

Design and verification for CDC synchronization based on TMR

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