Low-frequency noise and defects in copper and ruthenium resistors

Abstract

1.8-MeV proton irradiation to a fluence of 1014/cm2 does not significantly affect the resistance or low-frequency noise of copper or ruthenium resistors fabricated via modern microelectronic fabrication techniques used to form metal lines. The room-temperature noise of these Cu and Ru resistors is surprisingly similar to that of Cu and Pt metal lines and wires fabricated using late-1970s nanofabrication techniques; however, measurements of the temperature dependence of the noise show that the defect kinetics are quite different among the various materials. A large increase in the noise magnitude observed above 200 K in Cu but not in Ru is consistent with the superior resistance to electromigration that Ru lines have shown, relative to Cu.

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics

“…One of the examples [1], [15], [67], [72], [73] is shown in Fig. I-10, where defects in graphene transistors activated during irradiation were passivated during high-temperature annealing and were attributed to the influence of hydrogen-and oxygen-related defects.…”

“…In the previous almost 100 years, low-frequency noise with spectral density inversely proportional to frequency ( )S f f  at frequencies f<100 kHz, where α ≈ -1, has been observed and extensively investigated in a variety of microelectronic materials and devices: from metal films, wires and resistors [1] to high-electron-mobility transistors [2], solar cells [3] and graphene devices [4], [5]. It has been found that different physical mechanisms can be responsible for the 1/f noise in different electronic systems.…”

“…I-2 produces a noise spectrum with a Lorentzian shape, where the noise PSD is constant for low frequencies and decreases as 1/f -2 after reaching the cut-off frequency. 1/f noise is formed by a plurality of the switching events and if the distribution of the time constants of traps follows the rule D(τ) ̴ 1/τ for τ1<τ<τ2, so the shape of the 1/f noise is proportional to 1/f for 1/τ2<f<1/τ1 [6] and results in a similar spectrum shown in Fig frequency f0 much higher than the measuring frequency, and (3) the coupling constants between the random processes responsible for the noise and the total integrated noise magnitude are independent of frequency [1], [6], [50], [58], the frequency and temperature dependences of the noise are related via…”

Fluctuation-Enhanced Sensing: Review of Practical Issues

“…Assuming that all causes of interferences are removed by proper shielding and positioning of the components, the ultimate sensitivity is set by the intrinsic noise introduced by the DUT bias systems, by the preamplifiers that detect and amplify the noise signal across the DUT and, possibly, by other auxiliary systems such as DUT temperature control systems. While standard instrumentation exists that can be used for laboratory set ups and even wafer level noise testing [47][48][49], depending on the DUT characteristics, dedicated instrumentation may be a better choice in order to maximize sensitivity [50] and, in the specific case of FES applications, portability. The main circuitry solutions will be discussed in section 4.3.…”

Low-frequency noise and thermal equilibrium properties of vacancies

“…Previously, a new electromigration (EM) test method, based on low-frequency noise (LFN) measurements was proposed [1][2][3] . Contrary to standard test methods, LFN provides non-destructive and faster EM characterization, while enabling a deeper fundamental understanding of EM mechanisms [1][2][3][4][5] . A particularly interesting application of the LFN measurements is the calculation of EM activation energies, based on the model of Dutta et al 6,7 .…”